Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors

Kong-Thon Tsen; W. Liang; D. K. Ferry; Hai Lu; William J. Schaff; U. Ozgur; Y. Fu; Y. T. Moon; F. Yun; H. Morkoç; H. O. Everitt

doi:10.1016/j.spmi.2005.04.004

Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors

Kong-Thon Tsen, W. Liang, D. K. Ferry, Hai Lu, William J. Schaff, U. Ozgur, Y. Fu, Y. T. Moon, F. Yun, H. Morkoç, H. O. Everitt

Research output: Contribution to journal › Review article › peer-review

17 Scopus citations

Abstract

Ultrafast optical probes, photoluminescence spectroscopy, and Raman spectroscopy have been applied to investigate carrier dynamics in nitride-based binary and ternary, and dilute nitride semiconductors. Carrier dynamics in the form of radiative and non-radiative lifetimes in GaN grown on pseudo-in situ TiN and in situ SiN nanonetworks by organometallic vapor phase epitaxy have been investigated and compared with those for freestanding GaN templates which constitute the benchmark values due to the high quality. Room temperature carrier lifetimes as long as 1.86 ns could be achieved with the use of TiN network templates. Time-resolved Raman spectroscopy has been employed to investigate the carrier dynamics, carrier transport and non-equilibrium optical phonons in In-containing nitride-based semiconductors. (1) It has been found that the energy loss rate in In_xGa_1-xAs _1-yN_y is about 64 meV/ps suggesting that hot electrons lose their energy primarily to the GaAs-like LO phonons in this dilute nitride semiconductor. (2) Both the non-equilibrium electron distribution and the electron drift velocity in InGaN and InN have been measured. These experimental results are compared with ensemble Monte Carlo calculations and good agreement is found. (3) Our experimental results support the small bandgap value for InN (approximately 0.8 eV) and are inconsistent with the 0.8 eV luminescence emission being due to deep level radiative emission.

Original language	English (US)
Pages (from-to)	77-114
Number of pages	38
Journal	Superlattices and Microstructures
Volume	38
Issue number	2
DOIs	https://doi.org/10.1016/j.spmi.2005.04.004
State	Published - Aug 2005

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2005.04.004

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@article{3b8002032a3a45efb25b38f357515f60,

title = "Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors",

abstract = "Ultrafast optical probes, photoluminescence spectroscopy, and Raman spectroscopy have been applied to investigate carrier dynamics in nitride-based binary and ternary, and dilute nitride semiconductors. Carrier dynamics in the form of radiative and non-radiative lifetimes in GaN grown on pseudo-in situ TiN and in situ SiN nanonetworks by organometallic vapor phase epitaxy have been investigated and compared with those for freestanding GaN templates which constitute the benchmark values due to the high quality. Room temperature carrier lifetimes as long as 1.86 ns could be achieved with the use of TiN network templates. Time-resolved Raman spectroscopy has been employed to investigate the carrier dynamics, carrier transport and non-equilibrium optical phonons in In-containing nitride-based semiconductors. (1) It has been found that the energy loss rate in InxGa1-xAs 1-yNy is about 64 meV/ps suggesting that hot electrons lose their energy primarily to the GaAs-like LO phonons in this dilute nitride semiconductor. (2) Both the non-equilibrium electron distribution and the electron drift velocity in InGaN and InN have been measured. These experimental results are compared with ensemble Monte Carlo calculations and good agreement is found. (3) Our experimental results support the small bandgap value for InN (approximately 0.8 eV) and are inconsistent with the 0.8 eV luminescence emission being due to deep level radiative emission.",

author = "Kong-Thon Tsen and W. Liang and Ferry, {D. K.} and Hai Lu and Schaff, {William J.} and U. Ozgur and Y. Fu and Moon, {Y. T.} and F. Yun and H. Morko{\c c} and Everitt, {H. O.}",

note = "Funding Information: The work at ASU is supported by the National Science Foundation under Grant No. DMR-0305147 and the Multi-Investigator Proposal Development Grant Program of the College of Liberal Arts and Sciences at Arizona State University. The work at Cornell University is supported by ONR contract No. N000149910936 monitored by Dr. Colin Wood and an LBNL subcontract No. 6703635. The authors also want to acknowledge the technical assistance from Mark Little and Troy Richardson. The work at VCU was supported by a DURINT program administered by ONR (Dr. C.E.C. Wood). The research also benefited from grants from AFOSR (Dr. T. Steiner and Dr. G.L. Witt). The Duke portion of this work was funded in part by U.S. Army Research Office Grant W011NF-04-D-0001/DI #0002. The authors would like to thank Profs. R.M. Feenstra of Carnegie Mellon, T.S. Kuan of SUNY Albany, and D.J. Smith of Arizona State University for their critical contributions to the development of SiN and TiN nanonetwork-based GaN by MOCVD. The VCU group would also like to thank Drs. S.S. Park and K.Y. Lee of SAIT Samsung for the freestanding GaN.",

year = "2005",

month = aug,

doi = "10.1016/j.spmi.2005.04.004",

language = "English (US)",

volume = "38",

pages = "77--114",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "2",

}

TY - JOUR

T1 - Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors

AU - Tsen, Kong-Thon

AU - Liang, W.

AU - Ferry, D. K.

AU - Lu, Hai

AU - Schaff, William J.

AU - Ozgur, U.

AU - Fu, Y.

AU - Moon, Y. T.

AU - Yun, F.

AU - Morkoç, H.

AU - Everitt, H. O.

N1 - Funding Information: The work at ASU is supported by the National Science Foundation under Grant No. DMR-0305147 and the Multi-Investigator Proposal Development Grant Program of the College of Liberal Arts and Sciences at Arizona State University. The work at Cornell University is supported by ONR contract No. N000149910936 monitored by Dr. Colin Wood and an LBNL subcontract No. 6703635. The authors also want to acknowledge the technical assistance from Mark Little and Troy Richardson. The work at VCU was supported by a DURINT program administered by ONR (Dr. C.E.C. Wood). The research also benefited from grants from AFOSR (Dr. T. Steiner and Dr. G.L. Witt). The Duke portion of this work was funded in part by U.S. Army Research Office Grant W011NF-04-D-0001/DI #0002. The authors would like to thank Profs. R.M. Feenstra of Carnegie Mellon, T.S. Kuan of SUNY Albany, and D.J. Smith of Arizona State University for their critical contributions to the development of SiN and TiN nanonetwork-based GaN by MOCVD. The VCU group would also like to thank Drs. S.S. Park and K.Y. Lee of SAIT Samsung for the freestanding GaN.

PY - 2005/8

Y1 - 2005/8

N2 - Ultrafast optical probes, photoluminescence spectroscopy, and Raman spectroscopy have been applied to investigate carrier dynamics in nitride-based binary and ternary, and dilute nitride semiconductors. Carrier dynamics in the form of radiative and non-radiative lifetimes in GaN grown on pseudo-in situ TiN and in situ SiN nanonetworks by organometallic vapor phase epitaxy have been investigated and compared with those for freestanding GaN templates which constitute the benchmark values due to the high quality. Room temperature carrier lifetimes as long as 1.86 ns could be achieved with the use of TiN network templates. Time-resolved Raman spectroscopy has been employed to investigate the carrier dynamics, carrier transport and non-equilibrium optical phonons in In-containing nitride-based semiconductors. (1) It has been found that the energy loss rate in InxGa1-xAs 1-yNy is about 64 meV/ps suggesting that hot electrons lose their energy primarily to the GaAs-like LO phonons in this dilute nitride semiconductor. (2) Both the non-equilibrium electron distribution and the electron drift velocity in InGaN and InN have been measured. These experimental results are compared with ensemble Monte Carlo calculations and good agreement is found. (3) Our experimental results support the small bandgap value for InN (approximately 0.8 eV) and are inconsistent with the 0.8 eV luminescence emission being due to deep level radiative emission.

AB - Ultrafast optical probes, photoluminescence spectroscopy, and Raman spectroscopy have been applied to investigate carrier dynamics in nitride-based binary and ternary, and dilute nitride semiconductors. Carrier dynamics in the form of radiative and non-radiative lifetimes in GaN grown on pseudo-in situ TiN and in situ SiN nanonetworks by organometallic vapor phase epitaxy have been investigated and compared with those for freestanding GaN templates which constitute the benchmark values due to the high quality. Room temperature carrier lifetimes as long as 1.86 ns could be achieved with the use of TiN network templates. Time-resolved Raman spectroscopy has been employed to investigate the carrier dynamics, carrier transport and non-equilibrium optical phonons in In-containing nitride-based semiconductors. (1) It has been found that the energy loss rate in InxGa1-xAs 1-yNy is about 64 meV/ps suggesting that hot electrons lose their energy primarily to the GaAs-like LO phonons in this dilute nitride semiconductor. (2) Both the non-equilibrium electron distribution and the electron drift velocity in InGaN and InN have been measured. These experimental results are compared with ensemble Monte Carlo calculations and good agreement is found. (3) Our experimental results support the small bandgap value for InN (approximately 0.8 eV) and are inconsistent with the 0.8 eV luminescence emission being due to deep level radiative emission.

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EP - 114

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors

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