Optical spectroscopy of polytypic quantum wells in SiC

G. Samson, L. Chen, Brian Skromme, R. Wang, C. Li, I. Bhat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Optical characterization is used to study spontaneously formed polytypic quantum well structures in lightly doped epilayers on heavily doped ([N] > 3×1019 cm-3) 4H-SiC substrates. Low temperature (1.8 K) photoluminescence (PL) shows emission from the wells in both epilayer and substrate, the latter occurring at higher energy. A self-consistent model of the quantum wells including polarization charge is used to explain the results. Raman scattering data provide direct evidence of depletion of the 4H barriers in the substrate due to modulation doping into these wells.

Original languageEnglish (US)
Title of host publicationAIP Conference Proceedings
Pages989-990
Number of pages2
Volume772
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

Fingerprint

quantum wells
modulation doping
spectroscopy
depletion
Raman spectra
photoluminescence
polarization
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Samson, G., Chen, L., Skromme, B., Wang, R., Li, C., & Bhat, I. (2005). Optical spectroscopy of polytypic quantum wells in SiC. In AIP Conference Proceedings (Vol. 772, pp. 989-990) https://doi.org/10.1063/1.1994442

Optical spectroscopy of polytypic quantum wells in SiC. / Samson, G.; Chen, L.; Skromme, Brian; Wang, R.; Li, C.; Bhat, I.

AIP Conference Proceedings. Vol. 772 2005. p. 989-990.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Samson, G, Chen, L, Skromme, B, Wang, R, Li, C & Bhat, I 2005, Optical spectroscopy of polytypic quantum wells in SiC. in AIP Conference Proceedings. vol. 772, pp. 989-990, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994442
Samson G, Chen L, Skromme B, Wang R, Li C, Bhat I. Optical spectroscopy of polytypic quantum wells in SiC. In AIP Conference Proceedings. Vol. 772. 2005. p. 989-990 https://doi.org/10.1063/1.1994442
Samson, G. ; Chen, L. ; Skromme, Brian ; Wang, R. ; Li, C. ; Bhat, I. / Optical spectroscopy of polytypic quantum wells in SiC. AIP Conference Proceedings. Vol. 772 2005. pp. 989-990
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