Optical spectroscopy of polytypic quantum wells in SiC

G. Samson, L. Chen, Brian Skromme, R. Wang, C. Li, I. Bhat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Optical characterization is used to study spontaneously formed polytypic quantum well structures in lightly doped epilayers on heavily doped ([N] > 3×1019 cm-3) 4H-SiC substrates. Low temperature (1.8 K) photoluminescence (PL) shows emission from the wells in both epilayer and substrate, the latter occurring at higher energy. A self-consistent model of the quantum wells including polarization charge is used to explain the results. Raman scattering data provide direct evidence of depletion of the 4H barriers in the substrate due to modulation doping into these wells.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages989-990
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Samson, G., Chen, L., Skromme, B., Wang, R., Li, C., & Bhat, I. (2005). Optical spectroscopy of polytypic quantum wells in SiC. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 989-990). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994442