Optical spectroscopy of bulk GaN crystals grown from a Na-Ga melt

Brian Skromme, K. C. Palle, C. D. Poweleit, H. Yamane, M. Aoki, F. J. DiSalvo

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Abstract

A report on the optical spectroscopy of bulk gallium nitride crystals from Na-Ga melt was presented. The high purity was attributed to the low growth temperature and pressure. Low temperature excitonic photoluminescence (PL) and reflectance spectra was shown. The residual zinc implied that intentional zinc doping was possible and was used to make high resistivity material for microwave applications.

Original languageEnglish (US)
Pages (from-to)3765-3767
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number20
DOIs
StatePublished - Nov 11 2002

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Skromme, B., Palle, K. C., Poweleit, C. D., Yamane, H., Aoki, M., & DiSalvo, F. J. (2002). Optical spectroscopy of bulk GaN crystals grown from a Na-Ga melt. Applied Physics Letters, 81(20), 3765-3767. https://doi.org/10.1063/1.1521575