Optical spectroscopy of Bi containing semiconductors

A. Chernikov, S. Chatterjee, M. Koch, C. Bückers, S. W. Koch, S. Imhof, A. Thränhardt, Xianfeng Lu, Shane Johnson, D. A. Beaton, T. Tiedje

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The novel semiconductor material Ga(AsBi) is investigated by the time-resolved photoluminescence as function of lattice temperature, excitation density, and excitation energy. Disorder and localization effects are found to strongly influence the spectra and the dynamics.

Original languageEnglish (US)
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication2010 Laser Science to Photonic Applications, CLEO/QELS 2010
StatePublished - 2010
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Publication series

NameLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Other

OtherLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
Country/TerritoryUnited States
CitySan Jose, CA
Period5/16/105/21/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

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