Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers

T. L R Brien; P. A R Ade; P. S. Barry; C. J. Dunscombe; D. R. Leadley; D. V. Morozov; M. Myronov; E. H C Parker; M. J. Prest; M. Prunnila; R. V. Sudiwala; T. E. Whall; Philip Mauskopf

doi:10.1007/s10909-016-1569-x

Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers

T. L R Brien, P. A R Ade, P. S. Barry, C. J. Dunscombe, D. R. Leadley, D. V. Morozov, M. Myronov, E. H C Parker, M. J. Prest, M. Prunnila, R. V. Sudiwala, T. E. Whall, Philip Mauskopf

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4 Scopus citations

Abstract

We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small (32×14μm) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of 3.0 × 10 ^{- 16} and 6.6×10-17WHz-1/2 for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.

Original language	English (US)
Pages (from-to)	231-237
Number of pages	7
Journal	Journal of Low Temperature Physics
Volume	184
Issue number	1-2
DOIs	https://doi.org/10.1007/s10909-016-1569-x
State	Published - Jul 1 2016

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

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Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R., Morozov, D. V., Myronov, M., Parker, E. H. C., Prest, M. J., Prunnila, M., Sudiwala, R. V., Whall, T. E., & Mauskopf, P. (2016). Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers. Journal of Low Temperature Physics, 184(1-2), 231-237. https://doi.org/10.1007/s10909-016-1569-x

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title = "Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers",

abstract = "We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small (32×14μm) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of 3.0 × 10 - 16 and 6.6×10-17WHz-1/2 for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.",

author = "Brien, {T. L R} and Ade, {P. A R} and Barry, {P. S.} and Dunscombe, {C. J.} and Leadley, {D. R.} and Morozov, {D. V.} and M. Myronov and Parker, {E. H C} and Prest, {M. J.} and M. Prunnila and Sudiwala, {R. V.} and Whall, {T. E.} and Philip Mauskopf",

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doi = "10.1007/s10909-016-1569-x",

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AU - Brien, T. L R

AU - Ade, P. A R

AU - Barry, P. S.

AU - Dunscombe, C. J.

AU - Leadley, D. R.

AU - Morozov, D. V.

AU - Myronov, M.

AU - Parker, E. H C

AU - Prest, M. J.

AU - Prunnila, M.

AU - Sudiwala, R. V.

AU - Whall, T. E.

AU - Mauskopf, Philip

PY - 2016/7/1

Y1 - 2016/7/1

N2 - We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small (32×14μm) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of 3.0 × 10 - 16 and 6.6×10-17WHz-1/2 for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.

AB - We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small (32×14μm) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of 3.0 × 10 - 16 and 6.6×10-17WHz-1/2 for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.

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JO - Journal of Low Temperature Physics

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Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers

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