Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers

T. L R Brien, P. A R Ade, P. S. Barry, C. J. Dunscombe, D. R. Leadley, D. V. Morozov, M. Myronov, E. H C Parker, M. J. Prest, M. Prunnila, R. V. Sudiwala, T. E. Whall, Philip Mauskopf

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Abstract

We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ((Formula presented.)) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of (Formula presented.) and (Formula presented.) for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.

Original languageEnglish (US)
Pages (from-to)1-7
Number of pages7
JournalJournal of Low Temperature Physics
DOIs
StateAccepted/In press - Mar 9 2016

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)

Cite this

Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R., Morozov, D. V., Myronov, M., Parker, E. H. C., Prest, M. J., Prunnila, M., Sudiwala, R. V., Whall, T. E., & Mauskopf, P. (Accepted/In press). Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers. Journal of Low Temperature Physics, 1-7. https://doi.org/10.1007/s10909-016-1569-x