Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant

Preston T. Webster, Stephen T. Schaefer, Elizabeth H. Steenbergen, Shane Johnson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Strain-balanced InAs/InAsSb superlattices can be tuned to absorb and emit across the mid-to long-wave infrared, and exhibit appropriate minority carrier lifetimes for high performance infrared photodetectors. The optical quality of this material has been shown to improve with the use of Bi as a surfactant. Specifically, InAs/InAsSb superlattices grown at 425 °C and 430 °C exhibit improved photoluminescence intensity for Bi/In flux ratios up to 1.0%, and optical quality improves further with increasing growth temperature and increasing Bi/In flux ratios up to 5.0%. The identification of optimal growth conditions for InAs/InAsSb superlattices with Bi surfactant, as well as further exploration of the impact of Bi surfactant is an important component to further developing and optimizing this infrared material system. Several strain-balanced InAs/InAsSb superlattices are grown using molecular beam epitaxy at temperatures ranging from 425 °C to 475 °C using Bi/In flux ratios ranging from 0.0% to 10.0%. The structural and optical properties of the samples are evaluated using X-ray diffraction, secondary ion mass spectrometry, and photoluminescence spectroscopy. Analysis of the mass spectrometry data indicates that surfactant Bi incorporates into the InAs/InAsSb material system with a sticking coefficient of 0.3% at 450 °C, yielding dopant-level concentrations for typical Bi/In surfactant flux ratios. Analysis of the integrated photoluminescence intensity indicates that photoluminescence efficiency is greatest with a 1.0% Bi/In flux ratio for growth at 425-430 °C, and a 5.0% Bi/In flux ratio for growth at 450-475 °C. The improvement in photoluminescence efficiency is associated with a longer Shockley-Read-Hall lifetime in the superlattices grown with Bi surfactant.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nano Electronics and Photonics XV
EditorsGiuseppe Leo, Gail J. Brown, Manijeh Razeghi, Jay S. Lewis
PublisherSPIE
Volume10540
ISBN (Electronic)9781510615656
DOIs
StatePublished - Jan 1 2018
EventQuantum Sensing and Nano Electronics and Photonics XV 2018 - San Francisco, United States
Duration: Jan 28 2018Feb 2 2018

Other

OtherQuantum Sensing and Nano Electronics and Photonics XV 2018
CountryUnited States
CitySan Francisco
Period1/28/182/2/18

Fingerprint

Superlattices
Surfactant
Surface-Active Agents
Photoluminescence
superlattices
Surface active agents
surfactants
Fluxes
photoluminescence
Infrared
Mass Spectrometry
Infrared radiation
Lifetime
Optimal Growth
Epitaxy
Photoluminescence spectroscopy
Carrier lifetime
Photodetector
Growth temperature
carrier lifetime

Keywords

  • Bi
  • bismuth
  • InAs/InAsSb
  • superlattice
  • surfactant

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Webster, P. T., Schaefer, S. T., Steenbergen, E. H., & Johnson, S. (2018). Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant. In G. Leo, G. J. Brown, M. Razeghi, & J. S. Lewis (Eds.), Quantum Sensing and Nano Electronics and Photonics XV (Vol. 10540). [105401E] SPIE. https://doi.org/10.1117/12.2290860

Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant. / Webster, Preston T.; Schaefer, Stephen T.; Steenbergen, Elizabeth H.; Johnson, Shane.

Quantum Sensing and Nano Electronics and Photonics XV. ed. / Giuseppe Leo; Gail J. Brown; Manijeh Razeghi; Jay S. Lewis. Vol. 10540 SPIE, 2018. 105401E.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Webster, PT, Schaefer, ST, Steenbergen, EH & Johnson, S 2018, Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant. in G Leo, GJ Brown, M Razeghi & JS Lewis (eds), Quantum Sensing and Nano Electronics and Photonics XV. vol. 10540, 105401E, SPIE, Quantum Sensing and Nano Electronics and Photonics XV 2018, San Francisco, United States, 1/28/18. https://doi.org/10.1117/12.2290860
Webster PT, Schaefer ST, Steenbergen EH, Johnson S. Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant. In Leo G, Brown GJ, Razeghi M, Lewis JS, editors, Quantum Sensing and Nano Electronics and Photonics XV. Vol. 10540. SPIE. 2018. 105401E https://doi.org/10.1117/12.2290860
Webster, Preston T. ; Schaefer, Stephen T. ; Steenbergen, Elizabeth H. ; Johnson, Shane. / Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant. Quantum Sensing and Nano Electronics and Photonics XV. editor / Giuseppe Leo ; Gail J. Brown ; Manijeh Razeghi ; Jay S. Lewis. Vol. 10540 SPIE, 2018.
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abstract = "Strain-balanced InAs/InAsSb superlattices can be tuned to absorb and emit across the mid-to long-wave infrared, and exhibit appropriate minority carrier lifetimes for high performance infrared photodetectors. The optical quality of this material has been shown to improve with the use of Bi as a surfactant. Specifically, InAs/InAsSb superlattices grown at 425 °C and 430 °C exhibit improved photoluminescence intensity for Bi/In flux ratios up to 1.0{\%}, and optical quality improves further with increasing growth temperature and increasing Bi/In flux ratios up to 5.0{\%}. The identification of optimal growth conditions for InAs/InAsSb superlattices with Bi surfactant, as well as further exploration of the impact of Bi surfactant is an important component to further developing and optimizing this infrared material system. Several strain-balanced InAs/InAsSb superlattices are grown using molecular beam epitaxy at temperatures ranging from 425 °C to 475 °C using Bi/In flux ratios ranging from 0.0{\%} to 10.0{\%}. The structural and optical properties of the samples are evaluated using X-ray diffraction, secondary ion mass spectrometry, and photoluminescence spectroscopy. Analysis of the mass spectrometry data indicates that surfactant Bi incorporates into the InAs/InAsSb material system with a sticking coefficient of 0.3{\%} at 450 °C, yielding dopant-level concentrations for typical Bi/In surfactant flux ratios. Analysis of the integrated photoluminescence intensity indicates that photoluminescence efficiency is greatest with a 1.0{\%} Bi/In flux ratio for growth at 425-430 °C, and a 5.0{\%} Bi/In flux ratio for growth at 450-475 °C. The improvement in photoluminescence efficiency is associated with a longer Shockley-Read-Hall lifetime in the superlattices grown with Bi surfactant.",
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