Optical properties of strain-balanced InAs/InAs 1-xSb x type-II superlattices

E. H. Steenbergen, Y. Huang, J. H. Ryou, R. D. Dupuis, K. Nunna, D. L. Huffaker, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Metalorganic chemical vapor deposition- and molecular beam epitaxy-grown strain-balanced InAs/InAs 1-xSb x type-II superlattices with 20-100 periods and Sb composition between 0.22≤x≤0.30 exhibit photoluminescence between 5.8 to 10.6 μm at 5 K. The temperature dependent onset of photoresponse obtained from photoconductivity measurements is fit to the Varshni equation, resulting in fitting parameters closer to those of InAs than InSb, and the Fan expression, which gives a Debye temperature less than that of InAs or InSb.

Original languageEnglish (US)
Title of host publication15th International Conference on Narrow Gap Systems, NGS15
Pages122-125
Number of pages4
DOIs
StatePublished - Dec 1 2011
Event15th International Conference on Narrow Gap Systems, NGS15 - Blacksburg, VA, United States
Duration: Aug 1 2011Aug 5 2011

Publication series

NameAIP Conference Proceedings
Volume1416
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other15th International Conference on Narrow Gap Systems, NGS15
CountryUnited States
CityBlacksburg, VA
Period8/1/118/5/11

Keywords

  • Infrared
  • Metalorganic chemical vapor deposition
  • Molecular beam epitaxy
  • Photodetector
  • Superlattice

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Optical properties of strain-balanced InAs/InAs <sub>1-x</sub>Sb <sub>x</sub> type-II superlattices'. Together they form a unique fingerprint.

Cite this