Optical properties of nonpolar (1-1̄00) and semipolar (1-1̄01)GaN grown by MOCVD on Si patterned substrates

N. Izyumskaya, S. J. Liu, S. Okur, M. Wu, V. Avrutin, Ü Özgür, S. Metzner, F. Bertram, J. Christen, L. Zhou, David Smith, H. Morkoç

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Non-polar (1-1̄00) and semipolar (1-1̄01)GaN layers were grown on (112) and (001) Si substrates, respectively, by metalorganic chemical vapor deposition. In both cases, grooves aligned parallel to the <110> Si direction were formed by anisotropic wet etching to expose vertical {111}Si facets for growth initiation. The effect of growth conditions (substrate temperature, chamber pressure, ammonia and trimethylgallium flow rates) on the growth habits of GaN was studied. It was found that low pressure and low ammonia flow rate are beneficial for m-facet formation, while high ammonia flow rate promotes formation of (1-1̄01) facets. Steady-state and time-resolved photoluminescence measurements revealed that the optical quality of (1-1̄01) oriented GaN is comparable to that of c-plane GaN film grown on sapphire. The nonpolar (1-1̄00) GaN shows only weak emission and fast non-radiative recombination rate. The poor optical quality of the mplane GaN can be explained by carbon incorporation during the growth under low pressure. Although further optimization of the growth conditions for better optical quality is required, preliminary results obtained for semipolar (1-1̄01) -oriented GaN are encouraging.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices VI
DOIs
StatePublished - May 13 2011
EventGallium Nitride Materials and Devices VI - San Francisco, CA, United States
Duration: Jan 24 2011Jan 27 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7939
ISSN (Print)0277-786X

Other

OtherGallium Nitride Materials and Devices VI
CountryUnited States
CitySan Francisco, CA
Period1/24/111/27/11

Keywords

  • MOCVD
  • Si
  • nitride
  • nonpolar GaN
  • semipolar GaN
  • time-resolved photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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