Optical properties of nonpolar (1-1̄00) and semipolar (1-1̄01)GaN grown by MOCVD on Si patterned substrates

N. Izyumskaya, S. J. Liu, S. Okur, M. Wu, V. Avrutin, Ü Özgür, S. Metzner, F. Bertram, J. Christen, L. Zhou, David Smith, H. Morkoç

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Non-polar (1-1̄00) and semipolar (1-1̄01)GaN layers were grown on (112) and (001) Si substrates, respectively, by metalorganic chemical vapor deposition. In both cases, grooves aligned parallel to the <110> Si direction were formed by anisotropic wet etching to expose vertical {111}Si facets for growth initiation. The effect of growth conditions (substrate temperature, chamber pressure, ammonia and trimethylgallium flow rates) on the growth habits of GaN was studied. It was found that low pressure and low ammonia flow rate are beneficial for m-facet formation, while high ammonia flow rate promotes formation of (1-1̄01) facets. Steady-state and time-resolved photoluminescence measurements revealed that the optical quality of (1-1̄01) oriented GaN is comparable to that of c-plane GaN film grown on sapphire. The nonpolar (1-1̄00) GaN shows only weak emission and fast non-radiative recombination rate. The poor optical quality of the mplane GaN can be explained by carbon incorporation during the growth under low pressure. Although further optimization of the growth conditions for better optical quality is required, preliminary results obtained for semipolar (1-1̄01) -oriented GaN are encouraging.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7939
DOIs
StatePublished - 2011
EventGallium Nitride Materials and Devices VI - San Francisco, CA, United States
Duration: Jan 24 2011Jan 27 2011

Other

OtherGallium Nitride Materials and Devices VI
CountryUnited States
CitySan Francisco, CA
Period1/24/111/27/11

Fingerprint

MOCVD
Ammonia
Metallorganic chemical vapor deposition
Facet
Optical Properties
Flow Rate
metalorganic chemical vapor deposition
Optical properties
Substrate
Growth Conditions
optical properties
Substrates
ammonia
flat surfaces
flow velocity
Flow rate
Chemical Vapor Deposition
Sapphire
Photoluminescence
Etching

Keywords

  • MOCVD
  • nitride
  • nonpolar GaN
  • semipolar GaN
  • Si
  • time-resolved photoluminescence

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Izyumskaya, N., Liu, S. J., Okur, S., Wu, M., Avrutin, V., Özgür, Ü., ... Morkoç, H. (2011). Optical properties of nonpolar (1-1̄00) and semipolar (1-1̄01)GaN grown by MOCVD on Si patterned substrates. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7939). [79391W] https://doi.org/10.1117/12.875861

Optical properties of nonpolar (1-1̄00) and semipolar (1-1̄01)GaN grown by MOCVD on Si patterned substrates. / Izyumskaya, N.; Liu, S. J.; Okur, S.; Wu, M.; Avrutin, V.; Özgür, Ü; Metzner, S.; Bertram, F.; Christen, J.; Zhou, L.; Smith, David; Morkoç, H.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7939 2011. 79391W.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Izyumskaya, N, Liu, SJ, Okur, S, Wu, M, Avrutin, V, Özgür, Ü, Metzner, S, Bertram, F, Christen, J, Zhou, L, Smith, D & Morkoç, H 2011, Optical properties of nonpolar (1-1̄00) and semipolar (1-1̄01)GaN grown by MOCVD on Si patterned substrates. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7939, 79391W, Gallium Nitride Materials and Devices VI, San Francisco, CA, United States, 1/24/11. https://doi.org/10.1117/12.875861
Izyumskaya N, Liu SJ, Okur S, Wu M, Avrutin V, Özgür Ü et al. Optical properties of nonpolar (1-1̄00) and semipolar (1-1̄01)GaN grown by MOCVD on Si patterned substrates. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7939. 2011. 79391W https://doi.org/10.1117/12.875861
Izyumskaya, N. ; Liu, S. J. ; Okur, S. ; Wu, M. ; Avrutin, V. ; Özgür, Ü ; Metzner, S. ; Bertram, F. ; Christen, J. ; Zhou, L. ; Smith, David ; Morkoç, H. / Optical properties of nonpolar (1-1̄00) and semipolar (1-1̄01)GaN grown by MOCVD on Si patterned substrates. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7939 2011.
@inproceedings{8b06c6d87f914d50a5ba21abba2734c5,
title = "Optical properties of nonpolar (1-1̄00) and semipolar (1-1̄01)GaN grown by MOCVD on Si patterned substrates",
abstract = "Non-polar (1-1̄00) and semipolar (1-1̄01)GaN layers were grown on (112) and (001) Si substrates, respectively, by metalorganic chemical vapor deposition. In both cases, grooves aligned parallel to the <110> Si direction were formed by anisotropic wet etching to expose vertical {111}Si facets for growth initiation. The effect of growth conditions (substrate temperature, chamber pressure, ammonia and trimethylgallium flow rates) on the growth habits of GaN was studied. It was found that low pressure and low ammonia flow rate are beneficial for m-facet formation, while high ammonia flow rate promotes formation of (1-1̄01) facets. Steady-state and time-resolved photoluminescence measurements revealed that the optical quality of (1-1̄01) oriented GaN is comparable to that of c-plane GaN film grown on sapphire. The nonpolar (1-1̄00) GaN shows only weak emission and fast non-radiative recombination rate. The poor optical quality of the mplane GaN can be explained by carbon incorporation during the growth under low pressure. Although further optimization of the growth conditions for better optical quality is required, preliminary results obtained for semipolar (1-1̄01) -oriented GaN are encouraging.",
keywords = "MOCVD, nitride, nonpolar GaN, semipolar GaN, Si, time-resolved photoluminescence",
author = "N. Izyumskaya and Liu, {S. J.} and S. Okur and M. Wu and V. Avrutin and {\"U} {\"O}zg{\"u}r and S. Metzner and F. Bertram and J. Christen and L. Zhou and David Smith and H. Morko{\cc}",
year = "2011",
doi = "10.1117/12.875861",
language = "English (US)",
isbn = "9780819484765",
volume = "7939",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Optical properties of nonpolar (1-1̄00) and semipolar (1-1̄01)GaN grown by MOCVD on Si patterned substrates

AU - Izyumskaya, N.

AU - Liu, S. J.

AU - Okur, S.

AU - Wu, M.

AU - Avrutin, V.

AU - Özgür, Ü

AU - Metzner, S.

AU - Bertram, F.

AU - Christen, J.

AU - Zhou, L.

AU - Smith, David

AU - Morkoç, H.

PY - 2011

Y1 - 2011

N2 - Non-polar (1-1̄00) and semipolar (1-1̄01)GaN layers were grown on (112) and (001) Si substrates, respectively, by metalorganic chemical vapor deposition. In both cases, grooves aligned parallel to the <110> Si direction were formed by anisotropic wet etching to expose vertical {111}Si facets for growth initiation. The effect of growth conditions (substrate temperature, chamber pressure, ammonia and trimethylgallium flow rates) on the growth habits of GaN was studied. It was found that low pressure and low ammonia flow rate are beneficial for m-facet formation, while high ammonia flow rate promotes formation of (1-1̄01) facets. Steady-state and time-resolved photoluminescence measurements revealed that the optical quality of (1-1̄01) oriented GaN is comparable to that of c-plane GaN film grown on sapphire. The nonpolar (1-1̄00) GaN shows only weak emission and fast non-radiative recombination rate. The poor optical quality of the mplane GaN can be explained by carbon incorporation during the growth under low pressure. Although further optimization of the growth conditions for better optical quality is required, preliminary results obtained for semipolar (1-1̄01) -oriented GaN are encouraging.

AB - Non-polar (1-1̄00) and semipolar (1-1̄01)GaN layers were grown on (112) and (001) Si substrates, respectively, by metalorganic chemical vapor deposition. In both cases, grooves aligned parallel to the <110> Si direction were formed by anisotropic wet etching to expose vertical {111}Si facets for growth initiation. The effect of growth conditions (substrate temperature, chamber pressure, ammonia and trimethylgallium flow rates) on the growth habits of GaN was studied. It was found that low pressure and low ammonia flow rate are beneficial for m-facet formation, while high ammonia flow rate promotes formation of (1-1̄01) facets. Steady-state and time-resolved photoluminescence measurements revealed that the optical quality of (1-1̄01) oriented GaN is comparable to that of c-plane GaN film grown on sapphire. The nonpolar (1-1̄00) GaN shows only weak emission and fast non-radiative recombination rate. The poor optical quality of the mplane GaN can be explained by carbon incorporation during the growth under low pressure. Although further optimization of the growth conditions for better optical quality is required, preliminary results obtained for semipolar (1-1̄01) -oriented GaN are encouraging.

KW - MOCVD

KW - nitride

KW - nonpolar GaN

KW - semipolar GaN

KW - Si

KW - time-resolved photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=79955783935&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955783935&partnerID=8YFLogxK

U2 - 10.1117/12.875861

DO - 10.1117/12.875861

M3 - Conference contribution

AN - SCOPUS:79955783935

SN - 9780819484765

VL - 7939

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -