Ge1-x-ySixSny alloys with y > x have been grown directly on Si substrates. Room temperature photoluminescence measurements indicate that the alloys have direct bandgaps below that of pure Ge, thus representing an alternative to tensile-strained Ge and to Ge 1-ySny for long-wavelength applications. In comparison with binary Ge1-ySny alloys, ternary Ge 1-x-ySixSny alloys have superior stability due to their increased mixing entropy. The observation of photoluminescence from these films confirms that high-quality material can be grown in spite of the large size mismatch between Si and Sn.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)