Optical properties of Ge1x-ySixSny alloys with y > x: Direct bandgaps beyond 1550 nm

Chi Xu, Liying Jiang, John Kouvetakis, Jose Menendez

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Abstract

Ge1-x-ySixSny alloys with y > x have been grown directly on Si substrates. Room temperature photoluminescence measurements indicate that the alloys have direct bandgaps below that of pure Ge, thus representing an alternative to tensile-strained Ge and to Ge 1-ySny for long-wavelength applications. In comparison with binary Ge1-ySny alloys, ternary Ge 1-x-ySixSny alloys have superior stability due to their increased mixing entropy. The observation of photoluminescence from these films confirms that high-quality material can be grown in spite of the large size mismatch between Si and Sn.

Original languageEnglish (US)
Article number072111
JournalApplied Physics Letters
Volume103
Issue number7
DOIs
StatePublished - Aug 12 2013

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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