Optical properties of GaN nanowhiskers produced by photoelectrochemical etching

R. Geiss, H. M. Ng, A. Chowdhury, A. M. Sergent, S. Srinivasan, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The optical properties of GaN nanowhiskers with average diameters of 10 to 20 nm formed by photoelectrochemical etching were investigated using photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and imaging. The main donor-bound exciton peak of the etched sample showed a red-shift of 9 meV compared to the unetched sample. CL mapping revealed that the luminescence originated from the surrounding matrix of GaN while the nanowhiskers themselves were non-radiative. copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages415-419
Number of pages5
Volume3
Edition5
DOIs
StatePublished - 2006
EventState-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: Oct 29 2006Nov 3 2006

Other

OtherState-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting
CountryMexico
CityCancun
Period10/29/0611/3/06

ASJC Scopus subject areas

  • Engineering(all)

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