Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

F. Hamdani; A. Botchkarev; W. Kim; H. Morkoç; M. Yeadon; J. M. Gibson; S. C Y Tsen; David Smith; D. C. Reynolds; D. C. Look; K. Evans; C. W. Litton; W. C. Mitchel; P. Hemenger

doi:10.1063/1.118183

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S. C Y Tsen, David Smith, D. C. Reynolds, D. C. Look, K. Evans, C. W. Litton, W. C. Mitchel, P. Hemenger

Electrical Engineering

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Abstract

High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements point to high quality presumably due to the near match of both the crystal lattice parameter and the stacking order between GaN and ZnO. In addition, the good films lack the characteristic yellow photoluminescence band. Any misorientation of the GaN epilayer planes with respect to the ZnO substrate is not detectable with polarized reflectivity. The x-ray double crystal diffraction measurements indicate this misorientation is much smaller than those for GaN epilayers on SiC and Al₂O₃.

Original language	English (US)
Pages (from-to)	467-469
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	4
DOIs	https://doi.org/10.1063/1.118183
State	Published - Jan 27 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy",

abstract = "High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements point to high quality presumably due to the near match of both the crystal lattice parameter and the stacking order between GaN and ZnO. In addition, the good films lack the characteristic yellow photoluminescence band. Any misorientation of the GaN epilayer planes with respect to the ZnO substrate is not detectable with polarized reflectivity. The x-ray double crystal diffraction measurements indicate this misorientation is much smaller than those for GaN epilayers on SiC and Al2O3.",

author = "F. Hamdani and A. Botchkarev and W. Kim and H. Morko{\c c} and M. Yeadon and Gibson, {J. M.} and Tsen, {S. C Y} and David Smith and Reynolds, {D. C.} and Look, {D. C.} and K. Evans and Litton, {C. W.} and Mitchel, {W. C.} and P. Hemenger",

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TY - JOUR

T1 - Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

AU - Hamdani, F.

AU - Botchkarev, A.

AU - Kim, W.

AU - Morkoç, H.

AU - Yeadon, M.

AU - Gibson, J. M.

AU - Tsen, S. C Y

AU - Smith, David

AU - Reynolds, D. C.

AU - Look, D. C.

AU - Evans, K.

AU - Litton, C. W.

AU - Mitchel, W. C.

AU - Hemenger, P.

PY - 1997/1/27

Y1 - 1997/1/27

N2 - High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements point to high quality presumably due to the near match of both the crystal lattice parameter and the stacking order between GaN and ZnO. In addition, the good films lack the characteristic yellow photoluminescence band. Any misorientation of the GaN epilayer planes with respect to the ZnO substrate is not detectable with polarized reflectivity. The x-ray double crystal diffraction measurements indicate this misorientation is much smaller than those for GaN epilayers on SiC and Al2O3.

AB - High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements point to high quality presumably due to the near match of both the crystal lattice parameter and the stacking order between GaN and ZnO. In addition, the good films lack the characteristic yellow photoluminescence band. Any misorientation of the GaN epilayer planes with respect to the ZnO substrate is not detectable with polarized reflectivity. The x-ray double crystal diffraction measurements indicate this misorientation is much smaller than those for GaN epilayers on SiC and Al2O3.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

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