Optical properties of GaAsSb/GaAs quantum wells

J. B. Wang, G. Vaschenko, Shane Johnson, C. Z. Guo, C. S. Menoni, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A study was conducted on GaAsSb/GaAs quantum wells by the conventional and time-resolved photoluminescence spectroscopy. To verify the findings on the GaAsSb/GaAs quantum well band structure and to evaluate the spontaneous recombination lifetime in this material system, low-temperature (12K) transient PL measurements were performed. As such, a weak type I bandedge alignment for GaAsSb/GaAs heterostructure was confirmed.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages808-809
Number of pages2
Volume2
StatePublished - 2003
Event2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States
Duration: Oct 26 2003Oct 30 2003

Other

Other2003 IEEE LEOS Annual Meeting Conference Proceedings
CountryUnited States
CityTUCSON, AZ
Period10/26/0310/30/03

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Wang, J. B., Vaschenko, G., Johnson, S., Guo, C. Z., Menoni, C. S., & Zhang, Y-H. (2003). Optical properties of GaAsSb/GaAs quantum wells. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 2, pp. 808-809)