Optical properties of GaAsSb/GaAs quantum wells

J. B. Wang, G. Vaschenko, Shane Johnson, C. Z. Guo, C. S. Menoni, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A study was conducted on GaAsSb/GaAs quantum wells by the conventional and time-resolved photoluminescence spectroscopy. To verify the findings on the GaAsSb/GaAs quantum well band structure and to evaluate the spontaneous recombination lifetime in this material system, low-temperature (12K) transient PL measurements were performed. As such, a weak type I bandedge alignment for GaAsSb/GaAs heterostructure was confirmed.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages808-809
Number of pages2
Volume2
StatePublished - 2003
Event2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States
Duration: Oct 26 2003Oct 30 2003

Other

Other2003 IEEE LEOS Annual Meeting Conference Proceedings
CountryUnited States
CityTUCSON, AZ
Period10/26/0310/30/03

Fingerprint

Semiconductor quantum wells
Optical properties
Photoluminescence spectroscopy
Band structure
Heterojunctions
Temperature

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Wang, J. B., Vaschenko, G., Johnson, S., Guo, C. Z., Menoni, C. S., & Zhang, Y-H. (2003). Optical properties of GaAsSb/GaAs quantum wells. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 2, pp. 808-809)

Optical properties of GaAsSb/GaAs quantum wells. / Wang, J. B.; Vaschenko, G.; Johnson, Shane; Guo, C. Z.; Menoni, C. S.; Zhang, Yong-Hang.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2 2003. p. 808-809.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, JB, Vaschenko, G, Johnson, S, Guo, CZ, Menoni, CS & Zhang, Y-H 2003, Optical properties of GaAsSb/GaAs quantum wells. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 2, pp. 808-809, 2003 IEEE LEOS Annual Meeting Conference Proceedings, TUCSON, AZ, United States, 10/26/03.
Wang JB, Vaschenko G, Johnson S, Guo CZ, Menoni CS, Zhang Y-H. Optical properties of GaAsSb/GaAs quantum wells. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2. 2003. p. 808-809
Wang, J. B. ; Vaschenko, G. ; Johnson, Shane ; Guo, C. Z. ; Menoni, C. S. ; Zhang, Yong-Hang. / Optical properties of GaAsSb/GaAs quantum wells. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2 2003. pp. 808-809
@inproceedings{20e85328642f402fb221f52e6245c567,
title = "Optical properties of GaAsSb/GaAs quantum wells",
abstract = "A study was conducted on GaAsSb/GaAs quantum wells by the conventional and time-resolved photoluminescence spectroscopy. To verify the findings on the GaAsSb/GaAs quantum well band structure and to evaluate the spontaneous recombination lifetime in this material system, low-temperature (12K) transient PL measurements were performed. As such, a weak type I bandedge alignment for GaAsSb/GaAs heterostructure was confirmed.",
author = "Wang, {J. B.} and G. Vaschenko and Shane Johnson and Guo, {C. Z.} and Menoni, {C. S.} and Yong-Hang Zhang",
year = "2003",
language = "English (US)",
volume = "2",
pages = "808--809",
booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

}

TY - GEN

T1 - Optical properties of GaAsSb/GaAs quantum wells

AU - Wang, J. B.

AU - Vaschenko, G.

AU - Johnson, Shane

AU - Guo, C. Z.

AU - Menoni, C. S.

AU - Zhang, Yong-Hang

PY - 2003

Y1 - 2003

N2 - A study was conducted on GaAsSb/GaAs quantum wells by the conventional and time-resolved photoluminescence spectroscopy. To verify the findings on the GaAsSb/GaAs quantum well band structure and to evaluate the spontaneous recombination lifetime in this material system, low-temperature (12K) transient PL measurements were performed. As such, a weak type I bandedge alignment for GaAsSb/GaAs heterostructure was confirmed.

AB - A study was conducted on GaAsSb/GaAs quantum wells by the conventional and time-resolved photoluminescence spectroscopy. To verify the findings on the GaAsSb/GaAs quantum well band structure and to evaluate the spontaneous recombination lifetime in this material system, low-temperature (12K) transient PL measurements were performed. As such, a weak type I bandedge alignment for GaAsSb/GaAs heterostructure was confirmed.

UR - http://www.scopus.com/inward/record.url?scp=0344465757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344465757&partnerID=8YFLogxK

M3 - Conference contribution

VL - 2

SP - 808

EP - 809

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -