Optical properties of GaAsSb/GaAs quantum wells

J. B. Wang; G. Vaschenko; Shane Johnson; C. Z. Guo; C. S. Menoni; Yong-Hang Zhang

Optical properties of GaAsSb/GaAs quantum wells

J. B. Wang, G. Vaschenko, Shane Johnson, C. Z. Guo, C. S. Menoni, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A study was conducted on GaAsSb/GaAs quantum wells by the conventional and time-resolved photoluminescence spectroscopy. To verify the findings on the GaAsSb/GaAs quantum well band structure and to evaluate the spontaneous recombination lifetime in this material system, low-temperature (12K) transient PL measurements were performed. As such, a weak type I bandedge alignment for GaAsSb/GaAs heterostructure was confirmed.

Original language	English (US)
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages	808-809
Number of pages	2
Volume	2
State	Published - 2003
Event	2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States Duration: Oct 26 2003 → Oct 30 2003

Other

Other	2003 IEEE LEOS Annual Meeting Conference Proceedings
Country/Territory	United States
City	TUCSON, AZ
Period	10/26/03 → 10/30/03

ASJC Scopus subject areas

Industrial and Manufacturing Engineering
Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

@inproceedings{20e85328642f402fb221f52e6245c567,

title = "Optical properties of GaAsSb/GaAs quantum wells",

abstract = "A study was conducted on GaAsSb/GaAs quantum wells by the conventional and time-resolved photoluminescence spectroscopy. To verify the findings on the GaAsSb/GaAs quantum well band structure and to evaluate the spontaneous recombination lifetime in this material system, low-temperature (12K) transient PL measurements were performed. As such, a weak type I bandedge alignment for GaAsSb/GaAs heterostructure was confirmed.",

author = "Wang, {J. B.} and G. Vaschenko and Shane Johnson and Guo, {C. Z.} and Menoni, {C. S.} and Yong-Hang Zhang",

year = "2003",

language = "English (US)",

volume = "2",

pages = "808--809",

booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

note = "2003 IEEE LEOS Annual Meeting Conference Proceedings ; Conference date: 26-10-2003 Through 30-10-2003",

}

TY - GEN

T1 - Optical properties of GaAsSb/GaAs quantum wells

AU - Wang, J. B.

AU - Vaschenko, G.

AU - Johnson, Shane

AU - Guo, C. Z.

AU - Menoni, C. S.

AU - Zhang, Yong-Hang

PY - 2003

Y1 - 2003

N2 - A study was conducted on GaAsSb/GaAs quantum wells by the conventional and time-resolved photoluminescence spectroscopy. To verify the findings on the GaAsSb/GaAs quantum well band structure and to evaluate the spontaneous recombination lifetime in this material system, low-temperature (12K) transient PL measurements were performed. As such, a weak type I bandedge alignment for GaAsSb/GaAs heterostructure was confirmed.

AB - A study was conducted on GaAsSb/GaAs quantum wells by the conventional and time-resolved photoluminescence spectroscopy. To verify the findings on the GaAsSb/GaAs quantum well band structure and to evaluate the spontaneous recombination lifetime in this material system, low-temperature (12K) transient PL measurements were performed. As such, a weak type I bandedge alignment for GaAsSb/GaAs heterostructure was confirmed.

UR - http://www.scopus.com/inward/record.url?scp=0344465757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344465757&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0344465757

VL - 2

SP - 808

EP - 809

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2003 IEEE LEOS Annual Meeting Conference Proceedings

Y2 - 26 October 2003 through 30 October 2003

ER -

Optical properties of GaAsSb/GaAs quantum wells

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this