Optical properties of delta doped InAs/GaAs0.88Sb0.12 structure for novel concept solar cells

K. Y. Ban, S. N. Dahal, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated optical properties of InAs quantum dots (QDs) on GaAsSb barrier layer with different doping levels. In order to precisely control occupancy of subband levels in conduction band offset (CBO) in the material system, delta doping layer in the barrier was incorporated as an efficient carrier supply. Interband transitions between ground states or excited states were detected by implementing Time-integrated Photoluminescence (PL) whereas intersubband transitions have shown via Fourier Transform-Infrared Spectroscopy (FT-IR) at room temperature. The results are compared and discussed with theoretical calculation based on k.p. method.

Original languageEnglish (US)
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages1264-1267
Number of pages4
DOIs
StatePublished - Dec 1 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period6/7/096/12/09

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Ban, K. Y., Dahal, S. N., & Honsberg, C. (2009). Optical properties of delta doped InAs/GaAs0.88Sb0.12 structure for novel concept solar cells. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 1264-1267). [5411245] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411245