Optical properties of delta doped InAs/GaAs0.88Sb0.12 structure for novel concept solar cells

K. Y. Ban; S. N. Dahal; Christiana Honsberg

doi:10.1109/PVSC.2009.5411245

Optical properties of delta doped InAs/GaAs_0.88Sb_0.12 structure for novel concept solar cells

K. Y. Ban, S. N. Dahal, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have investigated optical properties of InAs quantum dots (QDs) on GaAsSb barrier layer with different doping levels. In order to precisely control occupancy of subband levels in conduction band offset (CBO) in the material system, delta doping layer in the barrier was incorporated as an efficient carrier supply. Interband transitions between ground states or excited states were detected by implementing Time-integrated Photoluminescence (PL) whereas intersubband transitions have shown via Fourier Transform-Infrared Spectroscopy (FT-IR) at room temperature. The results are compared and discussed with theoretical calculation based on k.p. method.

Original language	English (US)
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	1264-1267
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2009.5411245
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: Jun 7 2009 → Jun 12 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	6/7/09 → 6/12/09

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2009.5411245

Cite this

Optical properties of delta doped InAs/GaAs_0.88Sb_0.12 structure for novel concept solar cells. / Ban, K. Y.; Dahal, S. N.; Honsberg, Christiana.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 1264-1267 5411245 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ban, KY, Dahal, SN & Honsberg, C 2009, Optical properties of delta doped InAs/GaAs_0.88Sb_0.12 structure for novel concept solar cells. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411245, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1264-1267, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 6/7/09. https://doi.org/10.1109/PVSC.2009.5411245

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AB - We have investigated optical properties of InAs quantum dots (QDs) on GaAsSb barrier layer with different doping levels. In order to precisely control occupancy of subband levels in conduction band offset (CBO) in the material system, delta doping layer in the barrier was incorporated as an efficient carrier supply. Interband transitions between ground states or excited states were detected by implementing Time-integrated Photoluminescence (PL) whereas intersubband transitions have shown via Fourier Transform-Infrared Spectroscopy (FT-IR) at room temperature. The results are compared and discussed with theoretical calculation based on k.p. method.

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