@article{966c02d000c440b585b872883e6d0841,
title = "Optical Properties and Light-Emission Device Applications of 2-D Layered Semiconductors",
abstract = "Two-dimensional layered semiconductors have attracted a great deal of attention recently from many fields of science and technology. This article overviews the major progress from the perspective of light-emission properties and related device applications of such 2-D materials. We begin with the overview of basic optical properties, including emission features of various excitonic complexes, many-body effects, light-emission enhancement due to plasmonic coupling, and mechanisms of optical gain. This is followed by discussions of coupling of 2-D materials with an optical cavity, including cavity-enhanced emission due to the Purcell effect, strong and weak coupling, as well as lasing behavior. We then discuss the design and the fabrication of various heterostructures by stacking layers of different 2-D materials for the purpose of confining and injecting charge carriers. Such structures are indispensable for light-emitting devices under electrical injection, the ultimate goal of any semiconductor-based light-emitting diode (LED) or lasers. The progress in electrical injection devices is reviewed next, where LEDs under lateral and vertical electrical injection schemes are discussed. The review is concluded with an outlook and future perspectives.",
keywords = "2-D materials, lasers, light emission, light-emitting diodes (LEDs), light-matter interaction, many-body interaction, optical gain, plasmon, strong coupling, transition metal dichalcogenides (TMDCs)",
author = "Yongzhuo Li and Hao Sun and Lin Gan and Jianxing Zhang and Jiabin Feng and Danyang Zhang and Ning, {Cun Zheng}",
note = "Funding Information: Manuscript received March 18, 2019; revised July 22, 2019; accepted August 14, 2019. Date of publication September 11, 2019; date of current version April 28, 2020. This work was supported in part by the National Natural Science Foundation of China under Grant 91750206, Grant 61861136006, Grant 61705118, Grant 11774412, and Grant 61975252; in part by Beijing Natural Science Foundation under Grant Z180012; in part by the Beijing Innovation Center for Future Chips; in part by the Beijing National Center for Information Science and Technology; in part by the 985 University Program; in part by the Tsinghua University Initiative Scientific Research Program under Grant 20141081296; and in part by the Program of China Scholarships Council under Grant 201806210295. (Yongzhuo Li and Hao Sun contributed equally to this work.) (Corresponding author: Cun-Zheng Ning.) Y. Li, H. Sun, L. Gan, J. Feng, and D. Zhang are with the Department of Electronic Engineering, Tsinghua University, Beijing 100084, China, and also with the International Center for Nano-Optoelectronics, Tsinghua University, Beijing 100084, China. J. Zhang and C.-Z. Ning are with the Department of Electronic Engineering, Tsinghua University, Beijing 100084, China, with the International Center for Nano-Optoelectronics, Tsinghua University, Beijing 100084, China, and also with the School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: cning@tsinghua.edu.cn). Funding Information: This work was supported in part by the National Natural Science Foundation of China under Grant 91750206, Grant 61861136006, Grant 61705118, Grant 11774412, and Grant 61975252; in part by Beijing Natural Science Foundation under Grant Z180012; in part by the Beijing Innovation Center for Future Chips; in part by the Beijing National Center for Information Science and Technology; in part by the 985 University Program; in part by the Tsinghua University Initiative Scientific Research Program under Grant 20141081296; and in part by the Program of China Scholarships Council under Grant 201806210295. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2020",
month = may,
doi = "10.1109/JPROC.2019.2936424",
language = "English (US)",
volume = "108",
pages = "676--703",
journal = "Proceedings of the IEEE",
issn = "0018-9219",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}