Abstract

Two-dimensional layered semiconductors have attracted a great deal of attention recently from many fields of science and technology. This article overviews the major progress from the perspective of light-emission properties and related device applications of such 2-D materials. We begin with the overview of basic optical properties, including emission features of various excitonic complexes, many-body effects, light-emission enhancement due to plasmonic coupling, and mechanisms of optical gain. This is followed by discussions of coupling of 2-D materials with an optical cavity, including cavity-enhanced emission due to the Purcell effect, strong and weak coupling, as well as lasing behavior. We then discuss the design and the fabrication of various heterostructures by stacking layers of different 2-D materials for the purpose of confining and injecting charge carriers. Such structures are indispensable for light-emitting devices under electrical injection, the ultimate goal of any semiconductor-based light-emitting diode (LED) or lasers. The progress in electrical injection devices is reviewed next, where LEDs under lateral and vertical electrical injection schemes are discussed. The review is concluded with an outlook and future perspectives.

Original languageEnglish (US)
JournalProceedings of the IEEE
DOIs
StateAccepted/In press - Jan 1 2019

Fingerprint

Light emission
Optical properties
Light emitting diodes
Optical gain
Charge carriers
Heterojunctions
Semiconductor materials
Fabrication
Lasers
Layered semiconductors

Keywords

  • 2-D materials
  • lasers
  • light emission
  • light-emitting diodes (LEDs)
  • light-matter interaction
  • many-body interaction
  • optical gain
  • plasmon
  • strong coupling
  • transition metal dichalcogenides (TMDCs).

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Optical Properties and Light-Emission Device Applications of 2-D Layered Semiconductors. / Li, Yongzhuo; Sun, Hao; Gan, Lin; Zhang, Jianxing; Feng, Jiabin; Zhang, Danyang; Ning, Cun Zheng.

In: Proceedings of the IEEE, 01.01.2019.

Research output: Contribution to journalArticle

Li, Yongzhuo ; Sun, Hao ; Gan, Lin ; Zhang, Jianxing ; Feng, Jiabin ; Zhang, Danyang ; Ning, Cun Zheng. / Optical Properties and Light-Emission Device Applications of 2-D Layered Semiconductors. In: Proceedings of the IEEE. 2019.
@article{966c02d000c440b585b872883e6d0841,
title = "Optical Properties and Light-Emission Device Applications of 2-D Layered Semiconductors",
abstract = "Two-dimensional layered semiconductors have attracted a great deal of attention recently from many fields of science and technology. This article overviews the major progress from the perspective of light-emission properties and related device applications of such 2-D materials. We begin with the overview of basic optical properties, including emission features of various excitonic complexes, many-body effects, light-emission enhancement due to plasmonic coupling, and mechanisms of optical gain. This is followed by discussions of coupling of 2-D materials with an optical cavity, including cavity-enhanced emission due to the Purcell effect, strong and weak coupling, as well as lasing behavior. We then discuss the design and the fabrication of various heterostructures by stacking layers of different 2-D materials for the purpose of confining and injecting charge carriers. Such structures are indispensable for light-emitting devices under electrical injection, the ultimate goal of any semiconductor-based light-emitting diode (LED) or lasers. The progress in electrical injection devices is reviewed next, where LEDs under lateral and vertical electrical injection schemes are discussed. The review is concluded with an outlook and future perspectives.",
keywords = "2-D materials, lasers, light emission, light-emitting diodes (LEDs), light-matter interaction, many-body interaction, optical gain, plasmon, strong coupling, transition metal dichalcogenides (TMDCs).",
author = "Yongzhuo Li and Hao Sun and Lin Gan and Jianxing Zhang and Jiabin Feng and Danyang Zhang and Ning, {Cun Zheng}",
year = "2019",
month = "1",
day = "1",
doi = "10.1109/JPROC.2019.2936424",
language = "English (US)",
journal = "Proceedings of the IEEE",
issn = "0018-9219",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Optical Properties and Light-Emission Device Applications of 2-D Layered Semiconductors

AU - Li, Yongzhuo

AU - Sun, Hao

AU - Gan, Lin

AU - Zhang, Jianxing

AU - Feng, Jiabin

AU - Zhang, Danyang

AU - Ning, Cun Zheng

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Two-dimensional layered semiconductors have attracted a great deal of attention recently from many fields of science and technology. This article overviews the major progress from the perspective of light-emission properties and related device applications of such 2-D materials. We begin with the overview of basic optical properties, including emission features of various excitonic complexes, many-body effects, light-emission enhancement due to plasmonic coupling, and mechanisms of optical gain. This is followed by discussions of coupling of 2-D materials with an optical cavity, including cavity-enhanced emission due to the Purcell effect, strong and weak coupling, as well as lasing behavior. We then discuss the design and the fabrication of various heterostructures by stacking layers of different 2-D materials for the purpose of confining and injecting charge carriers. Such structures are indispensable for light-emitting devices under electrical injection, the ultimate goal of any semiconductor-based light-emitting diode (LED) or lasers. The progress in electrical injection devices is reviewed next, where LEDs under lateral and vertical electrical injection schemes are discussed. The review is concluded with an outlook and future perspectives.

AB - Two-dimensional layered semiconductors have attracted a great deal of attention recently from many fields of science and technology. This article overviews the major progress from the perspective of light-emission properties and related device applications of such 2-D materials. We begin with the overview of basic optical properties, including emission features of various excitonic complexes, many-body effects, light-emission enhancement due to plasmonic coupling, and mechanisms of optical gain. This is followed by discussions of coupling of 2-D materials with an optical cavity, including cavity-enhanced emission due to the Purcell effect, strong and weak coupling, as well as lasing behavior. We then discuss the design and the fabrication of various heterostructures by stacking layers of different 2-D materials for the purpose of confining and injecting charge carriers. Such structures are indispensable for light-emitting devices under electrical injection, the ultimate goal of any semiconductor-based light-emitting diode (LED) or lasers. The progress in electrical injection devices is reviewed next, where LEDs under lateral and vertical electrical injection schemes are discussed. The review is concluded with an outlook and future perspectives.

KW - 2-D materials

KW - lasers

KW - light emission

KW - light-emitting diodes (LEDs)

KW - light-matter interaction

KW - many-body interaction

KW - optical gain

KW - plasmon

KW - strong coupling

KW - transition metal dichalcogenides (TMDCs).

UR - http://www.scopus.com/inward/record.url?scp=85072181513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072181513&partnerID=8YFLogxK

U2 - 10.1109/JPROC.2019.2936424

DO - 10.1109/JPROC.2019.2936424

M3 - Article

AN - SCOPUS:85072181513

JO - Proceedings of the IEEE

JF - Proceedings of the IEEE

SN - 0018-9219

ER -