Optical polarization characteristics of semipolar (3031) and (3031) ingan/gan light-emitting diodes

Yuji Zhao, Qimin Yan, Daniel Feezell, Kenji Fujito, Chris G. Van de Walle, James S. Speck, Steven P. Den Baars, Shuji Nakamura

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k.p method for the above two planes. The theoretical calculations are consistent with the experimental results.

Original languageEnglish (US)
Pages (from-to)A53-A59
JournalOptics Express
Volume21
Issue number101
DOIs
StatePublished - Jan 14 2013

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Zhao, Y., Yan, Q., Feezell, D., Fujito, K., Van de Walle, C. G., Speck, J. S., Den Baars, S. P., & Nakamura, S. (2013). Optical polarization characteristics of semipolar (3031) and (3031) ingan/gan light-emitting diodes. Optics Express, 21(101), A53-A59. https://doi.org/10.1364/OE.21.000A53