Optical polarization characteristics of semipolar (3031) and (3031) ingan/gan light-emitting diodes

Yuji Zhao; Qimin Yan; Daniel Feezell; Kenji Fujito; Chris G. Van de Walle; James S. Speck; Steven P. Den Baars; Shuji Nakamura

doi:10.1364/OE.21.000A53

Optical polarization characteristics of semipolar (3031) and (3031) ingan/gan light-emitting diodes

Yuji Zhao, Qimin Yan, Daniel Feezell, Kenji Fujito, Chris G. Van de Walle, James S. Speck, Steven P. Den Baars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k.p method for the above two planes. The theoretical calculations are consistent with the experimental results.

Original language	English (US)
Pages (from-to)	A53-A59
Journal	Optics Express
Volume	21
Issue number	101
DOIs	https://doi.org/10.1364/OE.21.000A53
State	Published - Jan 14 2013
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Optical polarization characteristics of semipolar (3031) and (3031) ingan/gan light-emitting diodes",

abstract = "Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k.p method for the above two planes. The theoretical calculations are consistent with the experimental results.",

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T1 - Optical polarization characteristics of semipolar (3031) and (3031) ingan/gan light-emitting diodes

AU - Zhao, Yuji

AU - Yan, Qimin

AU - Feezell, Daniel

AU - Fujito, Kenji

AU - Van de Walle, Chris G.

AU - Speck, James S.

AU - Den Baars, Steven P.

AU - Nakamura, Shuji

PY - 2013/1/14

Y1 - 2013/1/14

N2 - Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k.p method for the above two planes. The theoretical calculations are consistent with the experimental results.

AB - Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k.p method for the above two planes. The theoretical calculations are consistent with the experimental results.

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JO - Optics Express

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Optical polarization characteristics of semipolar (3031) and (3031) ingan/gan light-emitting diodes

Abstract

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