Optical-phonon Raman-scattering study of short-period GaAs-AlAs superlattices: An examination of interface disorder

G. S. Spencer, Jose Menendez, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The effect of cation intermixing on the Raman spectrum of GaAs-AlAs superlattices has been investigated. Experimental measurements are compared with theoretical predictions based on fully three-dimensional supercell calculations. The accuracy of the modeled Raman spectra makes it possible to evaluate different mechanisms of interface disorder on a quantitative basis. In particular, a detailed comparison is made between the compositional profiles predicted by gallium-surface-segregation models and those resulting from simple cation intermixing at the GaAs-AlAs interfaces. Best agreement with experiment is obtained for the predictions of the surface-segregation models. These models, however, are unable to account simultaneously for the growth temperature dependence of the GaAs-like and AlAs-like Raman spectra, even when the kinetics of the disordering process is fully taken into account.

Original languageEnglish (US)
Pages (from-to)8205-8218
Number of pages14
JournalPhysical Review B
Volume52
Issue number11
DOIs
StatePublished - 1995

Fingerprint

Phonon scattering
Superlattices
superlattices
Raman scattering
Surface segregation
examination
disorders
Raman spectra
Cations
Positive ions
cations
Gallium
Growth temperature
predictions
gallium
temperature dependence
Kinetics
kinetics
profiles
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Optical-phonon Raman-scattering study of short-period GaAs-AlAs superlattices : An examination of interface disorder. / Spencer, G. S.; Menendez, Jose; Pfeiffer, L. N.; West, K. W.

In: Physical Review B, Vol. 52, No. 11, 1995, p. 8205-8218.

Research output: Contribution to journalArticle

@article{2b48b92bb95f47278aa8423978198423,
title = "Optical-phonon Raman-scattering study of short-period GaAs-AlAs superlattices: An examination of interface disorder",
abstract = "The effect of cation intermixing on the Raman spectrum of GaAs-AlAs superlattices has been investigated. Experimental measurements are compared with theoretical predictions based on fully three-dimensional supercell calculations. The accuracy of the modeled Raman spectra makes it possible to evaluate different mechanisms of interface disorder on a quantitative basis. In particular, a detailed comparison is made between the compositional profiles predicted by gallium-surface-segregation models and those resulting from simple cation intermixing at the GaAs-AlAs interfaces. Best agreement with experiment is obtained for the predictions of the surface-segregation models. These models, however, are unable to account simultaneously for the growth temperature dependence of the GaAs-like and AlAs-like Raman spectra, even when the kinetics of the disordering process is fully taken into account.",
author = "Spencer, {G. S.} and Jose Menendez and Pfeiffer, {L. N.} and West, {K. W.}",
year = "1995",
doi = "10.1103/PhysRevB.52.8205",
language = "English (US)",
volume = "52",
pages = "8205--8218",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Optical-phonon Raman-scattering study of short-period GaAs-AlAs superlattices

T2 - An examination of interface disorder

AU - Spencer, G. S.

AU - Menendez, Jose

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 1995

Y1 - 1995

N2 - The effect of cation intermixing on the Raman spectrum of GaAs-AlAs superlattices has been investigated. Experimental measurements are compared with theoretical predictions based on fully three-dimensional supercell calculations. The accuracy of the modeled Raman spectra makes it possible to evaluate different mechanisms of interface disorder on a quantitative basis. In particular, a detailed comparison is made between the compositional profiles predicted by gallium-surface-segregation models and those resulting from simple cation intermixing at the GaAs-AlAs interfaces. Best agreement with experiment is obtained for the predictions of the surface-segregation models. These models, however, are unable to account simultaneously for the growth temperature dependence of the GaAs-like and AlAs-like Raman spectra, even when the kinetics of the disordering process is fully taken into account.

AB - The effect of cation intermixing on the Raman spectrum of GaAs-AlAs superlattices has been investigated. Experimental measurements are compared with theoretical predictions based on fully three-dimensional supercell calculations. The accuracy of the modeled Raman spectra makes it possible to evaluate different mechanisms of interface disorder on a quantitative basis. In particular, a detailed comparison is made between the compositional profiles predicted by gallium-surface-segregation models and those resulting from simple cation intermixing at the GaAs-AlAs interfaces. Best agreement with experiment is obtained for the predictions of the surface-segregation models. These models, however, are unable to account simultaneously for the growth temperature dependence of the GaAs-like and AlAs-like Raman spectra, even when the kinetics of the disordering process is fully taken into account.

UR - http://www.scopus.com/inward/record.url?scp=0003052013&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0003052013&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.52.8205

DO - 10.1103/PhysRevB.52.8205

M3 - Article

AN - SCOPUS:0003052013

VL - 52

SP - 8205

EP - 8218

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 11

ER -