Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy

J. W. Hutchins; Brian Skromme; Y. P. Chen; S. Sivananthan; J. B. Posthill

doi:10.1063/1.119534

Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy

J. W. Hutchins, Brian Skromme, Y. P. Chen, S. Sivananthan, J. B. Posthill

IAFSE-ECEE: Electrical Engineering

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Abstract

Low temperature (1.7 K) reflectance and photoluminescence (PL) have been used to assess residual strain and impurities in molecular beam epitaxial (100) CdTe/Ge/Si and (100) ZnTe/Ge/Si. Both types of samples exhibit residual biaxial tensile thermal strain as expected from differences in previous thermal expansion data, but the measured magnitudes (0.72 × 10^-3 for CdTe/Ge/Si and 1.5 × 10^-3 for ZnTe/Ge/Si) are smaller than predicted. The results are consistent with either residual lattice mismatch stress or partial relaxation of the thermal strain during cooling. Residual acceptors in the CdTe include Cu and a frequently observed 49 meV level, whose PL peaks lack the previously reported linear polarization. However, a new series of linearly polarized bound exciton lines is reported in CdTe.

Original language	English (US)
Pages (from-to)	350-352
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	3
DOIs	https://doi.org/10.1063/1.119534
State	Published - Jul 21 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy",

abstract = "Low temperature (1.7 K) reflectance and photoluminescence (PL) have been used to assess residual strain and impurities in molecular beam epitaxial (100) CdTe/Ge/Si and (100) ZnTe/Ge/Si. Both types of samples exhibit residual biaxial tensile thermal strain as expected from differences in previous thermal expansion data, but the measured magnitudes (0.72 × 10-3 for CdTe/Ge/Si and 1.5 × 10-3 for ZnTe/Ge/Si) are smaller than predicted. The results are consistent with either residual lattice mismatch stress or partial relaxation of the thermal strain during cooling. Residual acceptors in the CdTe include Cu and a frequently observed 49 meV level, whose PL peaks lack the previously reported linear polarization. However, a new series of linearly polarized bound exciton lines is reported in CdTe.",

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T1 - Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy

AU - Hutchins, J. W.

AU - Skromme, Brian

AU - Chen, Y. P.

AU - Sivananthan, S.

AU - Posthill, J. B.

PY - 1997/7/21

Y1 - 1997/7/21

N2 - Low temperature (1.7 K) reflectance and photoluminescence (PL) have been used to assess residual strain and impurities in molecular beam epitaxial (100) CdTe/Ge/Si and (100) ZnTe/Ge/Si. Both types of samples exhibit residual biaxial tensile thermal strain as expected from differences in previous thermal expansion data, but the measured magnitudes (0.72 × 10-3 for CdTe/Ge/Si and 1.5 × 10-3 for ZnTe/Ge/Si) are smaller than predicted. The results are consistent with either residual lattice mismatch stress or partial relaxation of the thermal strain during cooling. Residual acceptors in the CdTe include Cu and a frequently observed 49 meV level, whose PL peaks lack the previously reported linear polarization. However, a new series of linearly polarized bound exciton lines is reported in CdTe.

AB - Low temperature (1.7 K) reflectance and photoluminescence (PL) have been used to assess residual strain and impurities in molecular beam epitaxial (100) CdTe/Ge/Si and (100) ZnTe/Ge/Si. Both types of samples exhibit residual biaxial tensile thermal strain as expected from differences in previous thermal expansion data, but the measured magnitudes (0.72 × 10-3 for CdTe/Ge/Si and 1.5 × 10-3 for ZnTe/Ge/Si) are smaller than predicted. The results are consistent with either residual lattice mismatch stress or partial relaxation of the thermal strain during cooling. Residual acceptors in the CdTe include Cu and a frequently observed 49 meV level, whose PL peaks lack the previously reported linear polarization. However, a new series of linearly polarized bound exciton lines is reported in CdTe.

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Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy

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