Abstract
Low temperature (1.7 K) reflectance and photoluminescence (PL) have been used to assess residual strain and impurities in molecular beam epitaxial (100) CdTe/Ge/Si and (100) ZnTe/Ge/Si. Both types of samples exhibit residual biaxial tensile thermal strain as expected from differences in previous thermal expansion data, but the measured magnitudes (0.72 × 10-3 for CdTe/Ge/Si and 1.5 × 10-3 for ZnTe/Ge/Si) are smaller than predicted. The results are consistent with either residual lattice mismatch stress or partial relaxation of the thermal strain during cooling. Residual acceptors in the CdTe include Cu and a frequently observed 49 meV level, whose PL peaks lack the previously reported linear polarization. However, a new series of linearly polarized bound exciton lines is reported in CdTe.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 350-352 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 71 |
| Issue number | 3 |
| State | Published - Jul 21 1997 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy. / Hutchins, J. W.; Skromme, Brian; Chen, Y. P.; Sivananthan, S.; Posthill, J. B.
In: Applied Physics Letters, Vol. 71, No. 3, 21.07.1997, p. 350-352.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy
AU - Hutchins, J. W.
AU - Skromme, Brian
AU - Chen, Y. P.
AU - Sivananthan, S.
AU - Posthill, J. B.
PY - 1997/7/21
Y1 - 1997/7/21
N2 - Low temperature (1.7 K) reflectance and photoluminescence (PL) have been used to assess residual strain and impurities in molecular beam epitaxial (100) CdTe/Ge/Si and (100) ZnTe/Ge/Si. Both types of samples exhibit residual biaxial tensile thermal strain as expected from differences in previous thermal expansion data, but the measured magnitudes (0.72 × 10-3 for CdTe/Ge/Si and 1.5 × 10-3 for ZnTe/Ge/Si) are smaller than predicted. The results are consistent with either residual lattice mismatch stress or partial relaxation of the thermal strain during cooling. Residual acceptors in the CdTe include Cu and a frequently observed 49 meV level, whose PL peaks lack the previously reported linear polarization. However, a new series of linearly polarized bound exciton lines is reported in CdTe.
AB - Low temperature (1.7 K) reflectance and photoluminescence (PL) have been used to assess residual strain and impurities in molecular beam epitaxial (100) CdTe/Ge/Si and (100) ZnTe/Ge/Si. Both types of samples exhibit residual biaxial tensile thermal strain as expected from differences in previous thermal expansion data, but the measured magnitudes (0.72 × 10-3 for CdTe/Ge/Si and 1.5 × 10-3 for ZnTe/Ge/Si) are smaller than predicted. The results are consistent with either residual lattice mismatch stress or partial relaxation of the thermal strain during cooling. Residual acceptors in the CdTe include Cu and a frequently observed 49 meV level, whose PL peaks lack the previously reported linear polarization. However, a new series of linearly polarized bound exciton lines is reported in CdTe.
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M3 - Article
AN - SCOPUS:0344207276
VL - 71
SP - 350
EP - 352
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
ER -