Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy

J. W. Hutchins, Brian Skromme, Y. P. Chen, S. Sivananthan, J. B. Posthill

Research output: Contribution to journalArticle

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Abstract

Low temperature (1.7 K) reflectance and photoluminescence (PL) have been used to assess residual strain and impurities in molecular beam epitaxial (100) CdTe/Ge/Si and (100) ZnTe/Ge/Si. Both types of samples exhibit residual biaxial tensile thermal strain as expected from differences in previous thermal expansion data, but the measured magnitudes (0.72 × 10-3 for CdTe/Ge/Si and 1.5 × 10-3 for ZnTe/Ge/Si) are smaller than predicted. The results are consistent with either residual lattice mismatch stress or partial relaxation of the thermal strain during cooling. Residual acceptors in the CdTe include Cu and a frequently observed 49 meV level, whose PL peaks lack the previously reported linear polarization. However, a new series of linearly polarized bound exciton lines is reported in CdTe.

Original languageEnglish (US)
Pages (from-to)350-352
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number3
StatePublished - Jul 21 1997

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molecular beam epitaxy
photoluminescence
defects
stress relaxation
linear polarization
molecular beams
thermal expansion
excitons
reflectance
cooling
impurities

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy. / Hutchins, J. W.; Skromme, Brian; Chen, Y. P.; Sivananthan, S.; Posthill, J. B.

In: Applied Physics Letters, Vol. 71, No. 3, 21.07.1997, p. 350-352.

Research output: Contribution to journalArticle

Hutchins, J. W. ; Skromme, Brian ; Chen, Y. P. ; Sivananthan, S. ; Posthill, J. B. / Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy. In: Applied Physics Letters. 1997 ; Vol. 71, No. 3. pp. 350-352.
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