Optical interconnects for high-speed data links

C. M. Ryu; U. Koelle; Shane Johnson; P. Dowd; R. Turpin; P. Kelkar; Yong-Hang Zhang

Optical interconnects for high-speed data links

C. M. Ryu, U. Koelle, Shane Johnson, P. Dowd, R. Turpin, P. Kelkar, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

We demonstrate the integration of vertical-cavity surface-emitting laser (VCSEL) arrays with Si-dummy chips for potential use in short-distance parallel optical interconnects. An 8×8 flip-chip bonded InGaAs (980 nm) VCSEL array was successfully modulated at data rates up to 0.8 Gbit/s/channel, corresponding to an aggregate data transmission capacity in excess of 50 Gbit/s. A 2×4 GaAs (850 nm) VCSEL array was indirectly flip-chip bonded to a Si substrate via a transparent glass carrier and package-limited data rates of 0.4 Gbit/s/channel were achieved. The large signal modulation bandwidth of these devices exceeded 2 Gbit/s. The electrical driving characteristics of the devices were found to be compatible with 3.3 V CMOS technology.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	10-17
Number of pages	8
Volume	3631
State	Published - 1999
Event	Proceedings of the 1999 Optoelectornic Integrated Circuits and Packaging III - San Jose, CA, USA Duration: Jan 28 1999 → Jan 29 1999

Other

Other	Proceedings of the 1999 Optoelectornic Integrated Circuits and Packaging III
City	San Jose, CA, USA
Period	1/28/99 → 1/29/99

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

Ryu, CM, Koelle, U, Johnson, S, Dowd, P, Turpin, R, Kelkar, P & Zhang, Y-H 1999, Optical interconnects for high-speed data links. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3631, Society of Photo-Optical Instrumentation Engineers, pp. 10-17, Proceedings of the 1999 Optoelectornic Integrated Circuits and Packaging III, San Jose, CA, USA, 1/28/99.

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abstract = "We demonstrate the integration of vertical-cavity surface-emitting laser (VCSEL) arrays with Si-dummy chips for potential use in short-distance parallel optical interconnects. An 8×8 flip-chip bonded InGaAs (980 nm) VCSEL array was successfully modulated at data rates up to 0.8 Gbit/s/channel, corresponding to an aggregate data transmission capacity in excess of 50 Gbit/s. A 2×4 GaAs (850 nm) VCSEL array was indirectly flip-chip bonded to a Si substrate via a transparent glass carrier and package-limited data rates of 0.4 Gbit/s/channel were achieved. The large signal modulation bandwidth of these devices exceeded 2 Gbit/s. The electrical driving characteristics of the devices were found to be compatible with 3.3 V CMOS technology.",

author = "Ryu, {C. M.} and U. Koelle and Shane Johnson and P. Dowd and R. Turpin and P. Kelkar and Yong-Hang Zhang",

year = "1999",

language = "English (US)",

volume = "3631",

pages = "10--17",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "Proceedings of the 1999 Optoelectornic Integrated Circuits and Packaging III ; Conference date: 28-01-1999 Through 29-01-1999",

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TY - CHAP

T1 - Optical interconnects for high-speed data links

AU - Ryu, C. M.

AU - Koelle, U.

AU - Johnson, Shane

AU - Dowd, P.

AU - Turpin, R.

AU - Kelkar, P.

AU - Zhang, Yong-Hang

PY - 1999

Y1 - 1999

N2 - We demonstrate the integration of vertical-cavity surface-emitting laser (VCSEL) arrays with Si-dummy chips for potential use in short-distance parallel optical interconnects. An 8×8 flip-chip bonded InGaAs (980 nm) VCSEL array was successfully modulated at data rates up to 0.8 Gbit/s/channel, corresponding to an aggregate data transmission capacity in excess of 50 Gbit/s. A 2×4 GaAs (850 nm) VCSEL array was indirectly flip-chip bonded to a Si substrate via a transparent glass carrier and package-limited data rates of 0.4 Gbit/s/channel were achieved. The large signal modulation bandwidth of these devices exceeded 2 Gbit/s. The electrical driving characteristics of the devices were found to be compatible with 3.3 V CMOS technology.

AB - We demonstrate the integration of vertical-cavity surface-emitting laser (VCSEL) arrays with Si-dummy chips for potential use in short-distance parallel optical interconnects. An 8×8 flip-chip bonded InGaAs (980 nm) VCSEL array was successfully modulated at data rates up to 0.8 Gbit/s/channel, corresponding to an aggregate data transmission capacity in excess of 50 Gbit/s. A 2×4 GaAs (850 nm) VCSEL array was indirectly flip-chip bonded to a Si substrate via a transparent glass carrier and package-limited data rates of 0.4 Gbit/s/channel were achieved. The large signal modulation bandwidth of these devices exceeded 2 Gbit/s. The electrical driving characteristics of the devices were found to be compatible with 3.3 V CMOS technology.

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M3 - Chapter

AN - SCOPUS:0032673466

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BT - Proceedings of SPIE - The International Society for Optical Engineering

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T2 - Proceedings of the 1999 Optoelectornic Integrated Circuits and Packaging III

Y2 - 28 January 1999 through 29 January 1999

ER -

Optical interconnects for high-speed data links

Abstract

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ASJC Scopus subject areas

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