Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

Yu I. Mazur; V. G. Dorogan; M. Schmidbauer; G. G. Tarasov; Shane Johnson; X. Lu; S. Q. Yu; Zh M. Wang; T. Tiedje; G. J. Salamo

doi:10.1088/0957-4484/22/37/375703

Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

Yu I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, Shane Johnson, X. Lu, S. Q. Yu, Zh M. Wang, T. Tiedje, G. J. Salamo

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A Ga(AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of ∼ 40meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions.

Original language	English (US)
Article number	375703
Journal	Nanotechnology
Volume	22
Issue number	37
DOIs	https://doi.org/10.1088/0957-4484/22/37/375703
State	Published - Sep 16 2011

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/0957-4484/22/37/375703

Cite this

@article{d42d957c79654bfe99490e695474514d,

title = "Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure",

abstract = "A Ga(AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of ∼ 40meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions.",

author = "Mazur, {Yu I.} and Dorogan, {V. G.} and M. Schmidbauer and Tarasov, {G. G.} and Shane Johnson and X. Lu and Yu, {S. Q.} and Wang, {Zh M.} and T. Tiedje and Salamo, {G. J.}",

year = "2011",

month = sep,

day = "16",

doi = "10.1088/0957-4484/22/37/375703",

language = "English (US)",

volume = "22",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "37",

}

TY - JOUR

T1 - Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

AU - Mazur, Yu I.

AU - Dorogan, V. G.

AU - Schmidbauer, M.

AU - Tarasov, G. G.

AU - Johnson, Shane

AU - Lu, X.

AU - Yu, S. Q.

AU - Wang, Zh M.

AU - Tiedje, T.

AU - Salamo, G. J.

PY - 2011/9/16

Y1 - 2011/9/16

N2 - A Ga(AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of ∼ 40meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions.

AB - A Ga(AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of ∼ 40meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions.

UR - http://www.scopus.com/inward/record.url?scp=80051996219&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051996219&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/22/37/375703

DO - 10.1088/0957-4484/22/37/375703

M3 - Article

C2 - 21852736

AN - SCOPUS:80051996219

SN - 0957-4484

VL - 22

JO - Nanotechnology

JF - Nanotechnology

IS - 37

M1 - 375703

ER -

Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this