Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

Yu I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, Shane Johnson, X. Lu, S. Q. Yu, Zh M. Wang, T. Tiedje, G. J. Salamo

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

A Ga(AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of ∼ 40meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions.

Original languageEnglish (US)
Article number375703
JournalNanotechnology
Volume22
Issue number37
DOIs
StatePublished - Sep 16 2011

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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