Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

Yu I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, Shane Johnson, X. Lu, S. Q. Yu, Zh M. Wang, T. Tiedje, G. J. Salamo

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

A Ga(AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of ∼ 40meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions.

Original languageEnglish (US)
Article number375703
JournalNanotechnology
Volume22
Issue number37
DOIs
StatePublished - Sep 16 2011

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Molecular beam epitaxy
Semiconductor quantum wells
Nanostructures
Photoluminescence
Temperature
Optical transitions
Excited states
Linewidth
Diffraction
X rays
gallium arsenide
Substrates

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure. / Mazur, Yu I.; Dorogan, V. G.; Schmidbauer, M.; Tarasov, G. G.; Johnson, Shane; Lu, X.; Yu, S. Q.; Wang, Zh M.; Tiedje, T.; Salamo, G. J.

In: Nanotechnology, Vol. 22, No. 37, 375703, 16.09.2011.

Research output: Contribution to journalArticle

Mazur, YI, Dorogan, VG, Schmidbauer, M, Tarasov, GG, Johnson, S, Lu, X, Yu, SQ, Wang, ZM, Tiedje, T & Salamo, GJ 2011, 'Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure', Nanotechnology, vol. 22, no. 37, 375703. https://doi.org/10.1088/0957-4484/22/37/375703
Mazur, Yu I. ; Dorogan, V. G. ; Schmidbauer, M. ; Tarasov, G. G. ; Johnson, Shane ; Lu, X. ; Yu, S. Q. ; Wang, Zh M. ; Tiedje, T. ; Salamo, G. J. / Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure. In: Nanotechnology. 2011 ; Vol. 22, No. 37.
@article{d42d957c79654bfe99490e695474514d,
title = "Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure",
abstract = "A Ga(AsBi) quantum well (QW) with Bi content reaching 6{\%} and well width of 11nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of ∼ 40meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions.",
author = "Mazur, {Yu I.} and Dorogan, {V. G.} and M. Schmidbauer and Tarasov, {G. G.} and Shane Johnson and X. Lu and Yu, {S. Q.} and Wang, {Zh M.} and T. Tiedje and Salamo, {G. J.}",
year = "2011",
month = "9",
day = "16",
doi = "10.1088/0957-4484/22/37/375703",
language = "English (US)",
volume = "22",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "37",

}

TY - JOUR

T1 - Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

AU - Mazur, Yu I.

AU - Dorogan, V. G.

AU - Schmidbauer, M.

AU - Tarasov, G. G.

AU - Johnson, Shane

AU - Lu, X.

AU - Yu, S. Q.

AU - Wang, Zh M.

AU - Tiedje, T.

AU - Salamo, G. J.

PY - 2011/9/16

Y1 - 2011/9/16

N2 - A Ga(AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of ∼ 40meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions.

AB - A Ga(AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of ∼ 40meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions.

UR - http://www.scopus.com/inward/record.url?scp=80051996219&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051996219&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/22/37/375703

DO - 10.1088/0957-4484/22/37/375703

M3 - Article

C2 - 21852736

AN - SCOPUS:80051996219

VL - 22

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 37

M1 - 375703

ER -