Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices

J. W. Hutchins, B. Parameshwaran, Brian Skromme, David Smith, S. Sivananthan

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We describe the photoluminescence and reflectance properties of Zn1 - xMnxSySe1 - y grown by molecular beam epitaxy on (100) GaAs substrates. A range of compositions has been explored with lattice constants ranging from 5.48 to 5.71 Å, and 300 (1.7) K bandgaps ranging from 2.68 (2.79) to 3.43 (3.65) eV. A multiple quantum well heterostructure with ZnSe wells exhibits quantum confinement up to 2.91 eV. The material is of potential interest as a lattice-matched cladding layer in ZnSe-based separate confinement heterostructure short wavelength lasers.

Original languageEnglish (US)
Pages (from-to)50-53
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
DOIs
StatePublished - Feb 1996

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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