Abstract
We describe the photoluminescence and reflectance properties of Zn1 - xMnxSySe1 - y grown by molecular beam epitaxy on (100) GaAs substrates. A range of compositions has been explored with lattice constants ranging from 5.48 to 5.71 Å, and 300 (1.7) K bandgaps ranging from 2.68 (2.79) to 3.43 (3.65) eV. A multiple quantum well heterostructure with ZnSe wells exhibits quantum confinement up to 2.91 eV. The material is of potential interest as a lattice-matched cladding layer in ZnSe-based separate confinement heterostructure short wavelength lasers.
Original language | English (US) |
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Pages (from-to) | 50-53 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 159 |
Issue number | 1-4 |
DOIs | |
State | Published - Feb 1996 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry