Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices

J. W. Hutchins, B. Parameshwaran, Brian Skromme, David Smith, S. Sivananthan

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We describe the photoluminescence and reflectance properties of Zn1 - xMnxSySe1 - y grown by molecular beam epitaxy on (100) GaAs substrates. A range of compositions has been explored with lattice constants ranging from 5.48 to 5.71 Å, and 300 (1.7) K bandgaps ranging from 2.68 (2.79) to 3.43 (3.65) eV. A multiple quantum well heterostructure with ZnSe wells exhibits quantum confinement up to 2.91 eV. The material is of potential interest as a lattice-matched cladding layer in ZnSe-based separate confinement heterostructure short wavelength lasers.

Original languageEnglish (US)
Pages (from-to)50-53
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
StatePublished - Feb 1996

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quaternary alloys
Heterojunctions
quantum wells
Quantum confinement
Molecular beam epitaxy
Semiconductor quantum wells
Lattice constants
Photoluminescence
Energy gap
molecular beam epitaxy
reflectance
photoluminescence
Wavelength
Lasers
Substrates
Chemical analysis
wavelengths
lasers
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices. / Hutchins, J. W.; Parameshwaran, B.; Skromme, Brian; Smith, David; Sivananthan, S.

In: Journal of Crystal Growth, Vol. 159, No. 1-4, 02.1996, p. 50-53.

Research output: Contribution to journalArticle

Hutchins, J. W. ; Parameshwaran, B. ; Skromme, Brian ; Smith, David ; Sivananthan, S. / Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices. In: Journal of Crystal Growth. 1996 ; Vol. 159, No. 1-4. pp. 50-53.
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