Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy

Minseo Park, E. Carlson, Y. C. Chang, J. F. Muth, J. Bumgarner, R. M. Kolbas, J. J. Cuomo, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The thick films of GaN were investigated using X-ray diffraction, micro-Raman spectroscopy and photoluminescence spectroscopy. The thick films of GaN were prepared on (0001) sapphire using high rate magnetron sputter epitaxy with growth rates as high as 10-60 μm/min. The width of the X-ray rocking curve ((0002) reflection) for the sample produced by this method is ∼300 arc-sec. Only the allowed modes were observed in the polarized Raman spectra. The background electron concentration is lower than 3×10 16 cm -3, which was determined from the Raman spectra. The phonon lifetime determined from Raman E 2 (2) mode was 1.6 ps, which is comparable to that of bulk single crystal GaN grown by sublimation (1.4 ps). The full-width-at-half-maximum of the near band-edge photoluminescence peak obtained at 77K is ∼100 meV.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, Y. Arakawa
Pages323-328
Number of pages6
Volume743
StatePublished - 2002
Externally publishedYes
EventGan and Related Alloys - 2002 - Boston, MA, United States
Duration: Dec 2 2002Dec 6 2002

Other

OtherGan and Related Alloys - 2002
CountryUnited States
CityBoston, MA
Period12/2/0212/6/02

Fingerprint

Epitaxial growth
Thick films
Raman scattering
Photoluminescence spectroscopy
Aluminum Oxide
Sublimation
Full width at half maximum
Sapphire
Raman spectroscopy
Photoluminescence
Single crystals
X ray diffraction
X rays
Electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Park, M., Carlson, E., Chang, Y. C., Muth, J. F., Bumgarner, J., Kolbas, R. M., ... Nemanich, R. (2002). Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy. In C. Wetzel, E. T. Yu, J. S. Speck, A. Rizzi, & Y. Arakawa (Eds.), Materials Research Society Symposium - Proceedings (Vol. 743, pp. 323-328)

Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy. / Park, Minseo; Carlson, E.; Chang, Y. C.; Muth, J. F.; Bumgarner, J.; Kolbas, R. M.; Cuomo, J. J.; Nemanich, Robert.

Materials Research Society Symposium - Proceedings. ed. / C. Wetzel; E.T. Yu; J.S. Speck; A. Rizzi; Y. Arakawa. Vol. 743 2002. p. 323-328.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, M, Carlson, E, Chang, YC, Muth, JF, Bumgarner, J, Kolbas, RM, Cuomo, JJ & Nemanich, R 2002, Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy. in C Wetzel, ET Yu, JS Speck, A Rizzi & Y Arakawa (eds), Materials Research Society Symposium - Proceedings. vol. 743, pp. 323-328, Gan and Related Alloys - 2002, Boston, MA, United States, 12/2/02.
Park M, Carlson E, Chang YC, Muth JF, Bumgarner J, Kolbas RM et al. Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy. In Wetzel C, Yu ET, Speck JS, Rizzi A, Arakawa Y, editors, Materials Research Society Symposium - Proceedings. Vol. 743. 2002. p. 323-328
Park, Minseo ; Carlson, E. ; Chang, Y. C. ; Muth, J. F. ; Bumgarner, J. ; Kolbas, R. M. ; Cuomo, J. J. ; Nemanich, Robert. / Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy. Materials Research Society Symposium - Proceedings. editor / C. Wetzel ; E.T. Yu ; J.S. Speck ; A. Rizzi ; Y. Arakawa. Vol. 743 2002. pp. 323-328
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N2 - The thick films of GaN were investigated using X-ray diffraction, micro-Raman spectroscopy and photoluminescence spectroscopy. The thick films of GaN were prepared on (0001) sapphire using high rate magnetron sputter epitaxy with growth rates as high as 10-60 μm/min. The width of the X-ray rocking curve ((0002) reflection) for the sample produced by this method is ∼300 arc-sec. Only the allowed modes were observed in the polarized Raman spectra. The background electron concentration is lower than 3×10 16 cm -3, which was determined from the Raman spectra. The phonon lifetime determined from Raman E 2 (2) mode was 1.6 ps, which is comparable to that of bulk single crystal GaN grown by sublimation (1.4 ps). The full-width-at-half-maximum of the near band-edge photoluminescence peak obtained at 77K is ∼100 meV.

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