Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy

Minseo Park; E. Carlson; Y. C. Chang; J. F. Muth; J. Bumgarner; R. M. Kolbas; J. J. Cuomo; Robert Nemanich

Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy

Minseo Park, E. Carlson, Y. C. Chang, J. F. Muth, J. Bumgarner, R. M. Kolbas, J. J. Cuomo, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The thick films of GaN were investigated using X-ray diffraction, micro-Raman spectroscopy and photoluminescence spectroscopy. The thick films of GaN were prepared on (0001) sapphire using high rate magnetron sputter epitaxy with growth rates as high as 10-60 μm/min. The width of the X-ray rocking curve ((0002) reflection) for the sample produced by this method is ∼300 arc-sec. Only the allowed modes were observed in the polarized Raman spectra. The background electron concentration is lower than 3×10 ¹⁶ cm ^-3, which was determined from the Raman spectra. The phonon lifetime determined from Raman E ₂ ⁽²⁾ mode was 1.6 ps, which is comparable to that of bulk single crystal GaN grown by sublimation (1.4 ps). The full-width-at-half-maximum of the near band-edge photoluminescence peak obtained at 77K is ∼100 meV.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	C. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, Y. Arakawa
Pages	323-328
Number of pages	6
Volume	743
State	Published - 2002
Externally published	Yes
Event	Gan and Related Alloys - 2002 - Boston, MA, United States Duration: Dec 2 2002 → Dec 6 2002

Other

Other	Gan and Related Alloys - 2002
Country/Territory	United States
City	Boston, MA
Period	12/2/02 → 12/6/02

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy. / Park, Minseo; Carlson, E.; Chang, Y. C. et al.

Materials Research Society Symposium - Proceedings. ed. / C. Wetzel; E.T. Yu; J.S. Speck; A. Rizzi; Y. Arakawa. Vol. 743 2002. p. 323-328.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Park, M, Carlson, E, Chang, YC, Muth, JF, Bumgarner, J, Kolbas, RM, Cuomo, JJ & Nemanich, R 2002, Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy. in C Wetzel, ET Yu, JS Speck, A Rizzi & Y Arakawa (eds), Materials Research Society Symposium - Proceedings. vol. 743, pp. 323-328, Gan and Related Alloys - 2002, Boston, MA, United States, 12/2/02.

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title = "Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy",

abstract = "The thick films of GaN were investigated using X-ray diffraction, micro-Raman spectroscopy and photoluminescence spectroscopy. The thick films of GaN were prepared on (0001) sapphire using high rate magnetron sputter epitaxy with growth rates as high as 10-60 μm/min. The width of the X-ray rocking curve ((0002) reflection) for the sample produced by this method is ∼300 arc-sec. Only the allowed modes were observed in the polarized Raman spectra. The background electron concentration is lower than 3×10 16 cm -3, which was determined from the Raman spectra. The phonon lifetime determined from Raman E 2 (2) mode was 1.6 ps, which is comparable to that of bulk single crystal GaN grown by sublimation (1.4 ps). The full-width-at-half-maximum of the near band-edge photoluminescence peak obtained at 77K is ∼100 meV. ",

author = "Minseo Park and E. Carlson and Chang, {Y. C.} and Muth, {J. F.} and J. Bumgarner and Kolbas, {R. M.} and Cuomo, {J. J.} and Robert Nemanich",

year = "2002",

language = "English (US)",

volume = "743",

pages = "323--328",

editor = "C. Wetzel and E.T. Yu and J.S. Speck and A. Rizzi and Y. Arakawa",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Gan and Related Alloys - 2002 ; Conference date: 02-12-2002 Through 06-12-2002",

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TY - GEN

T1 - Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy

AU - Park, Minseo

AU - Carlson, E.

AU - Chang, Y. C.

AU - Muth, J. F.

AU - Bumgarner, J.

AU - Kolbas, R. M.

AU - Cuomo, J. J.

AU - Nemanich, Robert

PY - 2002

Y1 - 2002

N2 - The thick films of GaN were investigated using X-ray diffraction, micro-Raman spectroscopy and photoluminescence spectroscopy. The thick films of GaN were prepared on (0001) sapphire using high rate magnetron sputter epitaxy with growth rates as high as 10-60 μm/min. The width of the X-ray rocking curve ((0002) reflection) for the sample produced by this method is ∼300 arc-sec. Only the allowed modes were observed in the polarized Raman spectra. The background electron concentration is lower than 3×10 16 cm -3, which was determined from the Raman spectra. The phonon lifetime determined from Raman E 2 (2) mode was 1.6 ps, which is comparable to that of bulk single crystal GaN grown by sublimation (1.4 ps). The full-width-at-half-maximum of the near band-edge photoluminescence peak obtained at 77K is ∼100 meV.

AB - The thick films of GaN were investigated using X-ray diffraction, micro-Raman spectroscopy and photoluminescence spectroscopy. The thick films of GaN were prepared on (0001) sapphire using high rate magnetron sputter epitaxy with growth rates as high as 10-60 μm/min. The width of the X-ray rocking curve ((0002) reflection) for the sample produced by this method is ∼300 arc-sec. Only the allowed modes were observed in the polarized Raman spectra. The background electron concentration is lower than 3×10 16 cm -3, which was determined from the Raman spectra. The phonon lifetime determined from Raman E 2 (2) mode was 1.6 ps, which is comparable to that of bulk single crystal GaN grown by sublimation (1.4 ps). The full-width-at-half-maximum of the near band-edge photoluminescence peak obtained at 77K is ∼100 meV.

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M3 - Conference contribution

AN - SCOPUS:0038116237

VL - 743

SP - 323

EP - 328

BT - Materials Research Society Symposium - Proceedings

A2 - Wetzel, C.

A2 - Yu, E.T.

A2 - Speck, J.S.

A2 - Rizzi, A.

A2 - Arakawa, Y.

T2 - Gan and Related Alloys - 2002

Y2 - 2 December 2002 through 6 December 2002

ER -

Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy

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