Optical characterization of bulk GaN grown from a Na/Ga flux

K. Palle; L. Chen; H. X. Liu; Brian Skromme; H. Yamane; M. Aoki; C. B. Hoffman; F. J. DiSalvo

Optical characterization of bulk GaN grown from a Na/Ga flux

K. Palle, L. Chen, H. X. Liu, Brian Skromme, H. Yamane, M. Aoki, C. B. Hoffman, F. J. DiSalvo

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	C. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, Y. Arakawa
Pages	201-206
Number of pages	6
Volume	743
State	Published - 2002
Event	Gan and Related Alloys - 2002 - Boston, MA, United States Duration: Dec 2 2002 → Dec 6 2002

Other

Other	Gan and Related Alloys - 2002
Country/Territory	United States
City	Boston, MA
Period	12/2/02 → 12/6/02

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{391db37cbcc54ab18954443c7ca64a0f,

title = "Optical characterization of bulk GaN grown from a Na/Ga flux",

abstract = "Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.",

author = "K. Palle and L. Chen and Liu, {H. X.} and Brian Skromme and H. Yamane and M. Aoki and Hoffman, {C. B.} and DiSalvo, {F. J.}",

year = "2002",

language = "English (US)",

volume = "743",

pages = "201--206",

editor = "C. Wetzel and E.T. Yu and J.S. Speck and A. Rizzi and Y. Arakawa",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Gan and Related Alloys - 2002 ; Conference date: 02-12-2002 Through 06-12-2002",

}

TY - GEN

T1 - Optical characterization of bulk GaN grown from a Na/Ga flux

AU - Palle, K.

AU - Chen, L.

AU - Liu, H. X.

AU - Skromme, Brian

AU - Yamane, H.

AU - Aoki, M.

AU - Hoffman, C. B.

AU - DiSalvo, F. J.

PY - 2002

Y1 - 2002

N2 - Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.

AB - Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.

UR - http://www.scopus.com/inward/record.url?scp=0038710549&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038710549&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0038710549

VL - 743

SP - 201

EP - 206

BT - Materials Research Society Symposium - Proceedings

A2 - Wetzel, C.

A2 - Yu, E.T.

A2 - Speck, J.S.

A2 - Rizzi, A.

A2 - Arakawa, Y.

T2 - Gan and Related Alloys - 2002

Y2 - 2 December 2002 through 6 December 2002

ER -

Optical characterization of bulk GaN grown from a Na/Ga flux

Abstract

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