Optical characterization of bulk GaN grown from a Na/Ga flux

K. Palle, L. Chen, H. X. Liu, Brian Skromme, H. Yamane, M. Aoki, C. B. Hoffman, F. J. DiSalvo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, Y. Arakawa
Pages201-206
Number of pages6
Volume743
StatePublished - 2002
EventGan and Related Alloys - 2002 - Boston, MA, United States
Duration: Dec 2 2002Dec 6 2002

Other

OtherGan and Related Alloys - 2002
CountryUnited States
CityBoston, MA
Period12/2/0212/6/02

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Palle, K., Chen, L., Liu, H. X., Skromme, B., Yamane, H., Aoki, M., Hoffman, C. B., & DiSalvo, F. J. (2002). Optical characterization of bulk GaN grown from a Na/Ga flux. In C. Wetzel, E. T. Yu, J. S. Speck, A. Rizzi, & Y. Arakawa (Eds.), Materials Research Society Symposium - Proceedings (Vol. 743, pp. 201-206)