Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

T. L R Brien, P. A R Ade, P. S. Barry, C. J. Dunscombe, D. R. Leadley, D. V. Morozov, M. Myronov, E. H C Parked, M. J. Prest, M. Prunnila, R. V. Sudiwala, T. E. Whall, Philip Mauskopf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.

Original languageEnglish (US)
Title of host publication2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467374347
DOIs
StatePublished - Apr 26 2016
Event8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015 - Cardiff, United Kingdom
Duration: Sep 14 2015Sep 15 2015

Other

Other8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015
CountryUnited Kingdom
CityCardiff
Period9/14/159/15/15

Fingerprint

Bolometers
bolometers
Detectors
Electrons
silicon
detectors
electrons
amplifiers
Slot antennas
slot antennas
Photons
time constant
electric contacts
Cooling
absorbers
Aluminum
Radiation
Strained silicon
aluminum
cooling

ASJC Scopus subject areas

  • Signal Processing
  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R., Morozov, D. V., ... Mauskopf, P. (2016). Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. In 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015 [7460630] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/UCMMT.2015.7460630

Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. / Brien, T. L R; Ade, P. A R; Barry, P. S.; Dunscombe, C. J.; Leadley, D. R.; Morozov, D. V.; Myronov, M.; Parked, E. H C; Prest, M. J.; Prunnila, M.; Sudiwala, R. V.; Whall, T. E.; Mauskopf, Philip.

2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015. Institute of Electrical and Electronics Engineers Inc., 2016. 7460630.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Brien, TLR, Ade, PAR, Barry, PS, Dunscombe, CJ, Leadley, DR, Morozov, DV, Myronov, M, Parked, EHC, Prest, MJ, Prunnila, M, Sudiwala, RV, Whall, TE & Mauskopf, P 2016, Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. in 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015., 7460630, Institute of Electrical and Electronics Engineers Inc., 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015, Cardiff, United Kingdom, 9/14/15. https://doi.org/10.1109/UCMMT.2015.7460630
Brien TLR, Ade PAR, Barry PS, Dunscombe CJ, Leadley DR, Morozov DV et al. Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. In 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015. Institute of Electrical and Electronics Engineers Inc. 2016. 7460630 https://doi.org/10.1109/UCMMT.2015.7460630
Brien, T. L R ; Ade, P. A R ; Barry, P. S. ; Dunscombe, C. J. ; Leadley, D. R. ; Morozov, D. V. ; Myronov, M. ; Parked, E. H C ; Prest, M. J. ; Prunnila, M. ; Sudiwala, R. V. ; Whall, T. E. ; Mauskopf, Philip. / Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015. Institute of Electrical and Electronics Engineers Inc., 2016.
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AU - Ade, P. A R

AU - Barry, P. S.

AU - Dunscombe, C. J.

AU - Leadley, D. R.

AU - Morozov, D. V.

AU - Myronov, M.

AU - Parked, E. H C

AU - Prest, M. J.

AU - Prunnila, M.

AU - Sudiwala, R. V.

AU - Whall, T. E.

AU - Mauskopf, Philip

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N2 - We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.

AB - We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.

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