Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

T. L R Brien; P. A R Ade; P. S. Barry; C. J. Dunscombe; D. R. Leadley; D. V. Morozov; M. Myronov; E. H C Parked; M. J. Prest; M. Prunnila; R. V. Sudiwala; T. E. Whall; Philip Mauskopf

doi:10.1109/UCMMT.2015.7460630

Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

T. L R Brien, P. A R Ade, P. S. Barry, C. J. Dunscombe, D. R. Leadley, D. V. Morozov, M. Myronov, E. H C Parked, M. J. Prest, M. Prunnila, R. V. Sudiwala, T. E. Whall, Philip Mauskopf

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ < 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10^-17 W Hz^-1/2 when observing a 77-Kelvin source.

Original language	English (US)
Title of host publication	2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467374347
DOIs	https://doi.org/10.1109/UCMMT.2015.7460630
State	Published - Apr 26 2016
Event	8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015 - Cardiff, United Kingdom Duration: Sep 14 2015 → Sep 15 2015

Publication series

Name	2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015

Other

Other	8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015
Country/Territory	United Kingdom
City	Cardiff
Period	9/14/15 → 9/15/15

ASJC Scopus subject areas

Signal Processing
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/UCMMT.2015.7460630

Cite this

Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R., Morozov, D. V., Myronov, M., Parked, E. H. C., Prest, M. J., Prunnila, M., Sudiwala, R. V., Whall, T. E., & Mauskopf, P. (2016). Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. In 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015 Article 7460630 (2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/UCMMT.2015.7460630

Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. / Brien, T. L R; Ade, P. A R; Barry, P. S. et al.
2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015. Institute of Electrical and Electronics Engineers Inc., 2016. 7460630 (2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Brien, TLR, Ade, PAR, Barry, PS, Dunscombe, CJ, Leadley, DR, Morozov, DV, Myronov, M, Parked, EHC, Prest, MJ, Prunnila, M, Sudiwala, RV, Whall, TE & Mauskopf, P 2016, Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. in 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015., 7460630, 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015, Institute of Electrical and Electronics Engineers Inc., 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015, Cardiff, United Kingdom, 9/14/15. https://doi.org/10.1109/UCMMT.2015.7460630

Brien TLR, Ade PAR, Barry PS, Dunscombe CJ, Leadley DR, Morozov DV et al. Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. In 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015. Institute of Electrical and Electronics Engineers Inc. 2016. 7460630. (2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015). doi: 10.1109/UCMMT.2015.7460630

@inproceedings{89587ef59312485eb9c23db12ce93754,

title = "Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz",

abstract = "We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ < 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.",

author = "Brien, {T. L R} and Ade, {P. A R} and Barry, {P. S.} and Dunscombe, {C. J.} and Leadley, {D. R.} and Morozov, {D. V.} and M. Myronov and Parked, {E. H C} and Prest, {M. J.} and M. Prunnila and Sudiwala, {R. V.} and Whall, {T. E.} and Philip Mauskopf",

note = "Funding Information: This work has been financially supported by the STFC through Grant ST/K000926/1, the EPSRC through grant numbers EP/F040784/1 and EP/J001074/1, and the Academy of Finland through Grant 252598. Publisher Copyright: {\textcopyright} 2015 IEEE.; 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015 ; Conference date: 14-09-2015 Through 15-09-2015",

year = "2016",

month = apr,

day = "26",

doi = "10.1109/UCMMT.2015.7460630",

language = "English (US)",

series = "2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015",

}

TY - GEN

T1 - Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

AU - Brien, T. L R

AU - Ade, P. A R

AU - Barry, P. S.

AU - Dunscombe, C. J.

AU - Leadley, D. R.

AU - Morozov, D. V.

AU - Myronov, M.

AU - Parked, E. H C

AU - Prest, M. J.

AU - Prunnila, M.

AU - Sudiwala, R. V.

AU - Whall, T. E.

AU - Mauskopf, Philip

N1 - Funding Information: This work has been financially supported by the STFC through Grant ST/K000926/1, the EPSRC through grant numbers EP/F040784/1 and EP/J001074/1, and the Academy of Finland through Grant 252598. Publisher Copyright: © 2015 IEEE.

PY - 2016/4/26

Y1 - 2016/4/26

N2 - We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ < 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.

AB - We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ < 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.

UR - http://www.scopus.com/inward/record.url?scp=84974530270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84974530270&partnerID=8YFLogxK

U2 - 10.1109/UCMMT.2015.7460630

DO - 10.1109/UCMMT.2015.7460630

M3 - Conference contribution

AN - SCOPUS:84974530270

T3 - 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015

BT - 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015

Y2 - 14 September 2015 through 15 September 2015

ER -

Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

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