A range of device quality Si xSn yGe 1-x-y alloys with unprecedented Sn content were grown and characterized. Spectroscopic ellipsometry analysis of these materials yielded dielectric functions as expected for a crystalline alloy with cubic symmetry. Incorporation of Si into SnGe yielded an additional reduction of the E 2 critical point, as expected based on the E 2 values of Si and Ge. The structure-composition relationship observed agrees well with first principles simulations and exhibits small deviations from Vegard's law behavior.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Feb 9 2004|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)