Optical and structural properties of Si xSn yGe 1-x-y alloys

P. Aella, C. Cook, J. Tolle, S. Zollner, Andrew Chizmeshya, John Kouvetakis

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Abstract

A range of device quality Si xSn yGe 1-x-y alloys with unprecedented Sn content were grown and characterized. Spectroscopic ellipsometry analysis of these materials yielded dielectric functions as expected for a crystalline alloy with cubic symmetry. Incorporation of Si into SnGe yielded an additional reduction of the E 2 critical point, as expected based on the E 2 values of Si and Ge. The structure-composition relationship observed agrees well with first principles simulations and exhibits small deviations from Vegard's law behavior.

Original languageEnglish (US)
Pages (from-to)888-890
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number6
DOIs
StatePublished - Feb 9 2004

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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