Abstract
Due to their large conduction-band offsets of up to 1.75 eV, GaN/Al(Ga)N quantum wells can support intersubband transitions at record short wavelengths, well into the low-loss transmission window of optical fibers. As a result, these quantum structures are promising to enable new intersubband device applications, including all-optical switching for ultra-broadband fiber-optic networks and emission of short-wave infrared radiation. Here we report our work on the development of high-quality GaN/Al(Ga)N quantum well structures designed for such applications.
Original language | English (US) |
---|---|
Pages (from-to) | 2394-2397 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 7 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2010 |
Keywords
- Devices
- GaN/AlGaN
- MBE
- Optical properties
- Quantum wells
- Structure
ASJC Scopus subject areas
- Condensed Matter Physics