Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications

Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Theodore D. Moustakas, Roberto Paiella, Lin Zhou, David Smith

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Due to their large conduction-band offsets of up to 1.75 eV, GaN/Al(Ga)N quantum wells can support intersubband transitions at record short wavelengths, well into the low-loss transmission window of optical fibers. As a result, these quantum structures are promising to enable new intersubband device applications, including all-optical switching for ultra-broadband fiber-optic networks and emission of short-wave infrared radiation. Here we report our work on the development of high-quality GaN/Al(Ga)N quantum well structures designed for such applications.

Original languageEnglish (US)
Pages (from-to)2394-2397
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume7
Issue number10
DOIs
StatePublished - Oct 1 2010

Keywords

  • Devices
  • GaN/AlGaN
  • MBE
  • Optical properties
  • Quantum wells
  • Structure

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications'. Together they form a unique fingerprint.

Cite this