Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications

Kristina Driscoll; Yitao Liao; Anirban Bhattacharyya; Theodore D. Moustakas; Roberto Paiella; Lin Zhou; David Smith

doi:10.1002/pssc.200983905

Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications

Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Theodore D. Moustakas, Roberto Paiella, Lin Zhou, David Smith

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Due to their large conduction-band offsets of up to 1.75 eV, GaN/Al(Ga)N quantum wells can support intersubband transitions at record short wavelengths, well into the low-loss transmission window of optical fibers. As a result, these quantum structures are promising to enable new intersubband device applications, including all-optical switching for ultra-broadband fiber-optic networks and emission of short-wave infrared radiation. Here we report our work on the development of high-quality GaN/Al(Ga)N quantum well structures designed for such applications.

Original language	English (US)
Pages (from-to)	2394-2397
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	10
DOIs	https://doi.org/10.1002/pssc.200983905
State	Published - Oct 2010

Keywords

Devices
GaN/AlGaN
MBE
Optical properties
Quantum wells
Structure

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200983905

Cite this

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title = "Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications",

abstract = "Due to their large conduction-band offsets of up to 1.75 eV, GaN/Al(Ga)N quantum wells can support intersubband transitions at record short wavelengths, well into the low-loss transmission window of optical fibers. As a result, these quantum structures are promising to enable new intersubband device applications, including all-optical switching for ultra-broadband fiber-optic networks and emission of short-wave infrared radiation. Here we report our work on the development of high-quality GaN/Al(Ga)N quantum well structures designed for such applications.",

keywords = "Devices, GaN/AlGaN, MBE, Optical properties, Quantum wells, Structure",

author = "Kristina Driscoll and Yitao Liao and Anirban Bhattacharyya and Moustakas, {Theodore D.} and Roberto Paiella and Lin Zhou and David Smith",

year = "2010",

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T1 - Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications

AU - Driscoll, Kristina

AU - Liao, Yitao

AU - Bhattacharyya, Anirban

AU - Moustakas, Theodore D.

AU - Paiella, Roberto

AU - Zhou, Lin

AU - Smith, David

PY - 2010/10

Y1 - 2010/10

N2 - Due to their large conduction-band offsets of up to 1.75 eV, GaN/Al(Ga)N quantum wells can support intersubband transitions at record short wavelengths, well into the low-loss transmission window of optical fibers. As a result, these quantum structures are promising to enable new intersubband device applications, including all-optical switching for ultra-broadband fiber-optic networks and emission of short-wave infrared radiation. Here we report our work on the development of high-quality GaN/Al(Ga)N quantum well structures designed for such applications.

AB - Due to their large conduction-band offsets of up to 1.75 eV, GaN/Al(Ga)N quantum wells can support intersubband transitions at record short wavelengths, well into the low-loss transmission window of optical fibers. As a result, these quantum structures are promising to enable new intersubband device applications, including all-optical switching for ultra-broadband fiber-optic networks and emission of short-wave infrared radiation. Here we report our work on the development of high-quality GaN/Al(Ga)N quantum well structures designed for such applications.

KW - Devices

KW - GaN/AlGaN

KW - MBE

KW - Optical properties

KW - Quantum wells

KW - Structure

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Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications

Abstract

Keywords

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