Optical and magneto-optical characterization of heteroepitaxial gallium nitride

Engineering & Materials Science

• Excitons 100%
• Gallium nitride 78%
• Excited states 37%
• Photoluminescence 36%
• Binding energy 36%
• Band structure 31%
• Electron transitions 21%
• Epilayers 19%
• Lattice constants 16%
• Raman scattering 16%
• Temperature 13%
• Spectroscopy 12%
• Characterization (materials science) 9%
• Magnetic fields 9%

Chemical Compounds

• Exciton 57%
• Nitride 54%
• Strain 31%
• Magnetoluminescence 25%
• Electronic Band Structure 22%
• Deformation Potential 20%
• Binding Energy 20%
• Shallow Donor 19%
• Excited State 18%
• Photoluminescence 17%
• Donor 15%
• Structure Parameter 14%
• Optical Spectroscopy 13%
• Lattice Constant 12%
• Magnetic Field 10%
• Ambient Reaction Temperature 6%
• Energy 5%

Physics & Astronomy

• gallium nitrides 66%
• excitons 44%
• characterization 31%
• binding energy 19%
• photoluminescence 15%
• reflectance 15%
• electron transitions 13%
• excitation 11%
• Raman spectra 8%
• curvature 8%
• wafers 8%
• room temperature 6%
• spectroscopy 5%
• electronics 5%
• magnetic fields 5%
• energy 3%