Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

E. R. Glaser, M. Murthy, J. A. Freitas, D. F. Storm, L. Zhou, David Smith

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24 GHz have been performed on a series of MBE-grown Mg-doped (1017-1020 cm-3) GaN homoepitaxial layers. High-resolution PL at 5 K revealed intense bandedge emission with narrow linewidths (0.2-0.4 meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for GaN heteroepitaxial layers doped with [Mg]>3×1018 cm-3, the only visible PL observed was strong shallow donor-shallow acceptor recombination with zero phonon line at 3.27 eV. Most notably, ODMR on this emission from a sample doped with [Mg] of 1×1017 cm-3 revealed the first evidence for the highly anisotropic g-tensor (g∼2.19, g∼0) expected for Mg shallow acceptors in wurtzite GaN. This result is attributed to the much reduced dislocation densities (≤5×106 cm-3) and Mg impurity concentrations compared to those characteristic of the more conventional investigated Mg-doped GaN heteroepitaxial layers.

Original languageEnglish (US)
Pages (from-to)327-330
Number of pages4
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
StatePublished - Dec 15 2007

Keywords

  • Doping
  • III-Nitrides and compounds
  • Magnetic resonance
  • Photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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