Optical and intervalley scattering in quantized inversion layers in semiconductors

D. K. Ferry

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Abstract

The momentum relaxation time for scattering of electrons in quantized levels of an inversion layer on a semiconductor surface is calculated for interactions via optical and intervalley phonons. A selection rule is found which prohibits transitions between subbands belonging to the same valley or set of valleys, at least in the zero order to which these scattering processes may occur. Relaxation times for the zero-order interaction and the first-order interaction are obtained for intervalley phonons. The results are applied to the case of a (100)-silicon surface, with electrons in the three lowest subbands (with energy levels E0, E1, E'0) of the two sets of valleys. Agreement with the experimental data of Fang and Fowler is good when the combined effects of intervalley and acoustic scattering are considered.

Original languageEnglish (US)
Pages (from-to)218-228
Number of pages11
JournalSurface Science
Volume57
Issue number1
DOIs
StatePublished - Jul 1 1976

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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