Optical and intervalley scattering in quantized inversion layers in semiconductors

D. K. Ferry

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

The momentum relaxation time for scattering of electrons in quantized levels of an inversion layer on a semiconductor surface is calculated for interactions via optical and intervalley phonons. A selection rule is found which prohibits transitions between subbands belonging to the same valley or set of valleys, at least in the zero order to which these scattering processes may occur. Relaxation times for the zero-order interaction and the first-order interaction are obtained for intervalley phonons. The results are applied to the case of a (100)-silicon surface, with electrons in the three lowest subbands (with energy levels E0, E1, E'0) of the two sets of valleys. Agreement with the experimental data of Fang and Fowler is good when the combined effects of intervalley and acoustic scattering are considered.

Original languageEnglish (US)
Pages (from-to)218-228
Number of pages11
JournalSurface Science
Volume57
Issue number1
DOIs
StatePublished - Jul 1 1976
Externally publishedYes

Fingerprint

Inversion layers
valleys
Scattering
inversions
Semiconductor materials
Phonons
Relaxation time
phonons
relaxation time
scattering
acoustic scattering
Electrons
Beam plasma interactions
interactions
Silicon
Electron energy levels
Momentum
electrons
energy levels
Acoustics

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Optical and intervalley scattering in quantized inversion layers in semiconductors. / Ferry, D. K.

In: Surface Science, Vol. 57, No. 1, 01.07.1976, p. 218-228.

Research output: Contribution to journalArticle

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