Optical and electrical properties of Zn1-xCdxO films grown on Si substrates by reactive radio-frequency magnetron sputtering

C. W. Sun, P. Xin, C. Y. Ma, Z. W. Liu, Q. Y. Zhang, Y. Q. Wang, Z. J. Yin, S. Huang, T. Chen

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Abstract

Zn1-xCdxO films (0≤x≤0.179) were grown on Si (001) substrates at 750 °C with a radio-frequency reactive magnetron sputtering method. Difference between the photoluminescence (PL) spectra taken at room temperature (RT) and at 12 K is reported and is deduced to be the result of PL emission from the ZnCdO phases with wurtzite and zinc blende structures. It is also found that the RT PL intensity is in inverse proportion to the carrier concentration in the films. Cd incorporation results in the transform of conductivity from p type to n type and a decrease of carrier mobility.

Original languageEnglish (US)
Article number181923
JournalApplied Physics Letters
Volume89
Issue number18
DOIs
StatePublished - Nov 13 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Sun, C. W., Xin, P., Ma, C. Y., Liu, Z. W., Zhang, Q. Y., Wang, Y. Q., Yin, Z. J., Huang, S., & Chen, T. (2006). Optical and electrical properties of Zn1-xCdxO films grown on Si substrates by reactive radio-frequency magnetron sputtering. Applied Physics Letters, 89(18), [181923]. https://doi.org/10.1063/1.2378527