Abstract
Ion implantation is used to investigate the spectroscopic properties of Mg, Be, and C acceptors in GaN. Activation of these species is studied using low temperature photoluminescence (PL). Low dose implants into high quality undoped hydride vapor phase epitaxial (HVPE) material are used in conjunction with high temperature (1300°C) rapid thermal anneals to obtain high quality spectra. Dramatic, dose-dependent evidence of Mg acceptor activation is observed without any co-implants, including a strong, sharp neutral Mg acceptor-bound exciton and strong donor-acceptor pair peaks. Variable temperature measurements reveal a band-to-acceptor transition, whose energy yields an optical binding energy of 224 meV. Be and C implants yield only slight evidence of shallow acceptor-related features and produce dose-correlated 2.2 eV PL, attributed to residual implantation damage. Their poor optical activation is tentatively attributed for insufficient vacancy production by these lighter ions. Clear evidence is obtained for donor-Zn acceptor pair and acceptor-bound exciton peaks in Zn-doped HVPE material.
| Original language | English (US) |
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| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Volume | 595 |
| State | Published - 2000 |
| Event | The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: Nov 28 1999 → Dec 3 1999 |
Other
| Other | The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' |
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| City | Boston, MA, USA |
| Period | 11/28/99 → 12/3/99 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials