Optical activation behavior of ion implanted acceptor species in GaN

Brian Skromme, G. L. Martinez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Ion implantation is used to investigate the spectroscopic properties of Mg, Be, and C acceptors in GaN. Activation of these species is studied using low temperature photoluminescence (PL). Low dose implants into high quality undoped hydride vapor phase epitaxial (HVPE) material are used in conjunction with high temperature (1300°C) rapid thermal anneals to obtain high quality spectra. Dramatic, dose-dependent evidence of Mg acceptor activation is observed without any co-implants, including a strong, sharp neutral Mg acceptor-bound exciton and strong donor-acceptor pair peaks. Variable temperature measurements reveal a band-to-acceptor transition, whose energy yields an optical binding energy of 224 meV. Be and C implants yield only slight evidence of shallow acceptor-related features and produce dose-correlated 2.2 eV PL, attributed to residual implantation damage. Their poor optical activation is tentatively attributed for insufficient vacancy production by these lighter ions. Clear evidence is obtained for donor-Zn acceptor pair and acceptor-bound exciton peaks in Zn-doped HVPE material.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Volume595
StatePublished - 2000
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
Duration: Nov 28 1999Dec 3 1999

Other

OtherThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'
CityBoston, MA, USA
Period11/28/9912/3/99

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Skromme, B., & Martinez, G. L. (2000). Optical activation behavior of ion implanted acceptor species in GaN. In Materials Research Society Symposium - Proceedings (Vol. 595). Materials Research Society.