Optical activation behavior of ion implanted acceptor species in GaN

Brian Skromme, G. L. Martinez

Research output: Contribution to journalArticle

Abstract

Ion implantation is used to investigate the spectroscopic properties of Mg, Be, and C acceptors in GaN. Activation of these species is studied using low temperature photoluminescence (PL). Low dose implants into high quality undoped hydride vapor phase epitaxial (HVPE) material are used in conjunction with high temperature (1300 °C) rapid thermal anneals to obtain high quality spectra. Dramatic, dose-dependent evidence of Mg acceptor activation is observed without any co-implants, including a strong, sharp neutral Mg acceptor-bound exciton and strong donor-acceptor pair peaks. Variable temperature measurements reveal a band-to-acceptor transition, whose energy yields an optical binding energy of 224 meV. Be and C implants yield only slight evidence of shallow acceptor-related features and produce dose-correlated 2.2 eV PL, attributed to residual implantation damage. Their poor optical activation is tentatively attributed to insufficient vacancy production by these lighter ions. Clear evidence is obtained for donor-Zn acceptor pair and acceptor-bound exciton peaks in Zn-doped HVPE material.

Original languageEnglish (US)
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberSUPPL. 1
StatePublished - 2000

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Chemical activation
Ions
Hydrides
Excitons
Ion implantation
Photoluminescence
Vapors
Binding energy
Temperature measurement
Vacancies
Temperature
LDS 751
Hot Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Optical activation behavior of ion implanted acceptor species in GaN. / Skromme, Brian; Martinez, G. L.

In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 5, No. SUPPL. 1, 2000.

Research output: Contribution to journalArticle

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