Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon

W. B. Jackson, D. K. Biegelsen, R. J. Nemanich, J. C. Knights

Research output: Contribution to journalArticle

96 Scopus citations

Abstract

The optical absorption of doped and undoped hydrogenated amorphous silicon (a-Si:H) films ranging from 5 nm to 10 μm was measured using photothermal deflection spectroscopy. The absorption spectra show that there is a high defect layer associated with the surface or interface of the film. From comparison of defect absorption and dangling bond spin densities, it is found that a-Si:H films which have ∼1015 bulk defects/cm3 exhibit surface or interface layers with ∼1012 dangling bonds/cm2.

Original languageEnglish (US)
Pages (from-to)105-107
Number of pages3
JournalApplied Physics Letters
Volume42
Issue number1
DOIs
StatePublished - Dec 1 1983
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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