Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon

W. B. Jackson; D. K. Biegelsen; R. J. Nemanich; J. C. Knights

doi:10.1063/1.93762

Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon

W. B. Jackson, D. K. Biegelsen, R. J. Nemanich, J. C. Knights

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Abstract

The optical absorption of doped and undoped hydrogenated amorphous silicon (a-Si:H) films ranging from 5 nm to 10 μm was measured using photothermal deflection spectroscopy. The absorption spectra show that there is a high defect layer associated with the surface or interface of the film. From comparison of defect absorption and dangling bond spin densities, it is found that a-Si:H films which have ∼10¹⁵ bulk defects/cm³ exhibit surface or interface layers with ∼10¹² dangling bonds/cm².

Original language	English (US)
Pages (from-to)	105-107
Number of pages	3
Journal	Applied Physics Letters
Volume	42
Issue number	1
DOIs	https://doi.org/10.1063/1.93762
State	Published - 1983
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon",

abstract = "The optical absorption of doped and undoped hydrogenated amorphous silicon (a-Si:H) films ranging from 5 nm to 10 μm was measured using photothermal deflection spectroscopy. The absorption spectra show that there is a high defect layer associated with the surface or interface of the film. From comparison of defect absorption and dangling bond spin densities, it is found that a-Si:H films which have ∼1015 bulk defects/cm3 exhibit surface or interface layers with ∼1012 dangling bonds/cm2.",

author = "Jackson, {W. B.} and Biegelsen, {D. K.} and Nemanich, {R. J.} and Knights, {J. C.}",

year = "1983",

doi = "10.1063/1.93762",

language = "English (US)",

volume = "42",

pages = "105--107",

journal = "Applied Physics Letters",

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T1 - Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon

AU - Jackson, W. B.

AU - Biegelsen, D. K.

AU - Nemanich, R. J.

AU - Knights, J. C.

PY - 1983

Y1 - 1983

N2 - The optical absorption of doped and undoped hydrogenated amorphous silicon (a-Si:H) films ranging from 5 nm to 10 μm was measured using photothermal deflection spectroscopy. The absorption spectra show that there is a high defect layer associated with the surface or interface of the film. From comparison of defect absorption and dangling bond spin densities, it is found that a-Si:H films which have ∼1015 bulk defects/cm3 exhibit surface or interface layers with ∼1012 dangling bonds/cm2.

AB - The optical absorption of doped and undoped hydrogenated amorphous silicon (a-Si:H) films ranging from 5 nm to 10 μm was measured using photothermal deflection spectroscopy. The absorption spectra show that there is a high defect layer associated with the surface or interface of the film. From comparison of defect absorption and dangling bond spin densities, it is found that a-Si:H films which have ∼1015 bulk defects/cm3 exhibit surface or interface layers with ∼1012 dangling bonds/cm2.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon

Abstract

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