Abstract

The temperature dependences of the optical absorption edges of semi-insulating GaAs and InP have been measured from room temperature to 905 °C and 748 °C, respectively, with accuracies of ±1 °C at room temperature and ±5 °C at 900 °C. The temperature dependence of the optical absorption edge is adequately reproduced by an Einstein model although the Varshni model gives an improved fit to the band gap. Finally, the widths of the absorption edges are correlated with ionicity.

Original languageEnglish (US)
Pages (from-to)3540-3542
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number26
DOIs
StatePublished - Jun 30 1997

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optical absorption
temperature dependence
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Optical absorption edge of semi-insulating GaAs and InP at high temperatures. / Beaudoin, M.; DeVries, A. J.G.; Johnson, Shane; Laman, H.; Tiedje, T.

In: Applied Physics Letters, Vol. 70, No. 26, 30.06.1997, p. 3540-3542.

Research output: Contribution to journalArticle

Beaudoin, M. ; DeVries, A. J.G. ; Johnson, Shane ; Laman, H. ; Tiedje, T. / Optical absorption edge of semi-insulating GaAs and InP at high temperatures. In: Applied Physics Letters. 1997 ; Vol. 70, No. 26. pp. 3540-3542.
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