Optical absorption edge of semi-insulating GaAs and InP at high temperatures

M. Beaudoin; A. J.G. DeVries; Shane Johnson; H. Laman; T. Tiedje

doi:10.1063/1.119226

Optical absorption edge of semi-insulating GaAs and InP at high temperatures

M. Beaudoin, A. J.G. DeVries, Shane Johnson, H. Laman, T. Tiedje

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147 Scopus citations

Abstract

The temperature dependences of the optical absorption edges of semi-insulating GaAs and InP have been measured from room temperature to 905 °C and 748 °C, respectively, with accuracies of ±1 °C at room temperature and ±5 °C at 900 °C. The temperature dependence of the optical absorption edge is adequately reproduced by an Einstein model although the Varshni model gives an improved fit to the band gap. Finally, the widths of the absorption edges are correlated with ionicity.

Original language	English (US)
Pages (from-to)	3540-3542
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	26
DOIs	https://doi.org/10.1063/1.119226
State	Published - Jun 30 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The temperature dependences of the optical absorption edges of semi-insulating GaAs and InP have been measured from room temperature to 905 °C and 748 °C, respectively, with accuracies of ±1 °C at room temperature and ±5 °C at 900 °C. The temperature dependence of the optical absorption edge is adequately reproduced by an Einstein model although the Varshni model gives an improved fit to the band gap. Finally, the widths of the absorption edges are correlated with ionicity.",

author = "M. Beaudoin and DeVries, {A. J.G.} and Shane Johnson and H. Laman and T. Tiedje",

year = "1997",

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T1 - Optical absorption edge of semi-insulating GaAs and InP at high temperatures

AU - Beaudoin, M.

AU - DeVries, A. J.G.

AU - Johnson, Shane

AU - Laman, H.

AU - Tiedje, T.

PY - 1997/6/30

Y1 - 1997/6/30

N2 - The temperature dependences of the optical absorption edges of semi-insulating GaAs and InP have been measured from room temperature to 905 °C and 748 °C, respectively, with accuracies of ±1 °C at room temperature and ±5 °C at 900 °C. The temperature dependence of the optical absorption edge is adequately reproduced by an Einstein model although the Varshni model gives an improved fit to the band gap. Finally, the widths of the absorption edges are correlated with ionicity.

AB - The temperature dependences of the optical absorption edges of semi-insulating GaAs and InP have been measured from room temperature to 905 °C and 748 °C, respectively, with accuracies of ±1 °C at room temperature and ±5 °C at 900 °C. The temperature dependence of the optical absorption edge is adequately reproduced by an Einstein model although the Varshni model gives an improved fit to the band gap. Finally, the widths of the absorption edges are correlated with ionicity.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Optical absorption edge of semi-insulating GaAs and InP at high temperatures

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