Optical absorption dependence on composition and thickness of In _xGa _{1 - X}N (0.05 < × < 0.22) grown on GaN/sapphire

Engineering & Materials Science

• Light absorption 100%
• Sapphire 88%
• Defects 45%
• Chemical analysis 43%
• Energy gap 30%
• Crystalline materials 27%
• Thin films 25%
• Epilayers 22%
• Photoluminescence 21%
• Epitaxial growth 18%
• Solar cells 14%
• X ray diffraction 13%
• Electric fields 12%
• Lasers 10%

Chemical Compounds

• Subband 95%
• Absorptivity 63%
• Epitaxial Growth 40%
• Electric Field 29%
• Solar Cell 28%
• Photoluminescence 25%
• X-Ray Diffraction 16%

Physics & Astronomy

• optical absorption 56%
• sapphire 56%
• defects 36%
• thin films 13%
• solar cells 9%
• photoluminescence 9%
• requirements 9%
• electric fields 7%
• diffraction 7%
• x rays 5%
• lasers 5%