Optical absorption dependence on composition and thickness of In xGa 1 - XN (0.05 < × < 0.22) grown on GaN/sapphire

Balakrishnam R. Jampana, Conan R. Weiland, Robert L. Opila, Ian T. Ferguson, Christiana Honsberg

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report the change in optical absorption properties of InGaN epilayers around the critical layer thickness determined from X-ray diffraction. Detrimental sub-band gap absorption is observed in InGaN thin films grown beyond the critical layer thicknesses, and is caused by localized electric fields around extended crystalline defects and aided by V-defects through light channeling. The photoluminescence response from InGaN thin films, grown beyond the critical layer thickness, is reduced owing to absorption of the incident laser light by non-radiative recombination extended crystalline defects. The formation of V-defects is observed to occur beyond the critical layer thickness and continues to grow in areal coverage aiding in sub-band gap absorption. This optical behavior sets constraints to be incorporated in the design of InGaN solar cell and requirement for improvement in epitaxial growth techniques to reduce V-defects.

Original languageEnglish (US)
Pages (from-to)6807-6812
Number of pages6
JournalThin Solid Films
Volume520
Issue number22
DOIs
StatePublished - Sep 1 2012

Fingerprint

Aluminum Oxide
Sapphire
Light absorption
sapphire
optical absorption
Defects
defects
Chemical analysis
Energy gap
Crystalline materials
Thin films
Epilayers
thin films
Epitaxial growth
Solar cells
Photoluminescence
solar cells
Electric fields
photoluminescence
X ray diffraction

Keywords

  • Crystalline defects
  • Indium gallium nitride
  • Optical absorption
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Optical absorption dependence on composition and thickness of In xGa 1 - XN (0.05 < × < 0.22) grown on GaN/sapphire. / Jampana, Balakrishnam R.; Weiland, Conan R.; Opila, Robert L.; Ferguson, Ian T.; Honsberg, Christiana.

In: Thin Solid Films, Vol. 520, No. 22, 01.09.2012, p. 6807-6812.

Research output: Contribution to journalArticle

Jampana, Balakrishnam R. ; Weiland, Conan R. ; Opila, Robert L. ; Ferguson, Ian T. ; Honsberg, Christiana. / Optical absorption dependence on composition and thickness of In xGa 1 - XN (0.05 < × < 0.22) grown on GaN/sapphire. In: Thin Solid Films. 2012 ; Vol. 520, No. 22. pp. 6807-6812.
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AU - Ferguson, Ian T.

AU - Honsberg, Christiana

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AB - We report the change in optical absorption properties of InGaN epilayers around the critical layer thickness determined from X-ray diffraction. Detrimental sub-band gap absorption is observed in InGaN thin films grown beyond the critical layer thicknesses, and is caused by localized electric fields around extended crystalline defects and aided by V-defects through light channeling. The photoluminescence response from InGaN thin films, grown beyond the critical layer thickness, is reduced owing to absorption of the incident laser light by non-radiative recombination extended crystalline defects. The formation of V-defects is observed to occur beyond the critical layer thickness and continues to grow in areal coverage aiding in sub-band gap absorption. This optical behavior sets constraints to be incorporated in the design of InGaN solar cell and requirement for improvement in epitaxial growth techniques to reduce V-defects.

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