Onset of quantization in ultra-submicron semiconductor devices

David K. Ferry

Research output: Contribution to journalArticle

86 Citations (Scopus)

Abstract

Within the next decade or so, it is expected that gate lengths will shrink to 50 nm or less in devices found in integrated circuits. At the same time, the thermal de Broglie wavelength for electrons in Si at 300 K is some 5 nm. How might we expect quantum mechanics to arise in the transport through these small devices? Here, issues relevant for the quantum transport description of transport in ultra-small devices are discussed, such as the issue of quantum localization - just how small can the minimum area be in which a single electron can be localized. After discussing such a minimum size, the localization packet is associated with an `effective' potential in which sharp discontinuities are removed from the potential within the device. The replacement of sharp potentials by smoothed potentials removes much of the driving force for quantization within these device structures. It will be shown that the introduction of such an effective potential leads to an enhancement of the drain-induced barrier lowering in ultra-small devices, principally in the `on' state.

Original languageEnglish (US)
Pages (from-to)61-66
Number of pages6
JournalSuperlattices and Microstructures
Volume27
Issue number2
DOIs
StatePublished - Feb 2000

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Semiconductor devices
semiconductor devices
Electrons
Quantum theory
Integrated circuits
Wavelength
de Broglie wavelengths
integrated circuits
quantum mechanics
discontinuity
electrons
augmentation
Hot Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Onset of quantization in ultra-submicron semiconductor devices. / Ferry, David K.

In: Superlattices and Microstructures, Vol. 27, No. 2, 02.2000, p. 61-66.

Research output: Contribution to journalArticle

@article{288d7f5f4b994ff5b984d50f63b1a6af,
title = "Onset of quantization in ultra-submicron semiconductor devices",
abstract = "Within the next decade or so, it is expected that gate lengths will shrink to 50 nm or less in devices found in integrated circuits. At the same time, the thermal de Broglie wavelength for electrons in Si at 300 K is some 5 nm. How might we expect quantum mechanics to arise in the transport through these small devices? Here, issues relevant for the quantum transport description of transport in ultra-small devices are discussed, such as the issue of quantum localization - just how small can the minimum area be in which a single electron can be localized. After discussing such a minimum size, the localization packet is associated with an `effective' potential in which sharp discontinuities are removed from the potential within the device. The replacement of sharp potentials by smoothed potentials removes much of the driving force for quantization within these device structures. It will be shown that the introduction of such an effective potential leads to an enhancement of the drain-induced barrier lowering in ultra-small devices, principally in the `on' state.",
author = "Ferry, {David K.}",
year = "2000",
month = "2",
doi = "10.1006/spmi.1999.0800",
language = "English (US)",
volume = "27",
pages = "61--66",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "2",

}

TY - JOUR

T1 - Onset of quantization in ultra-submicron semiconductor devices

AU - Ferry, David K.

PY - 2000/2

Y1 - 2000/2

N2 - Within the next decade or so, it is expected that gate lengths will shrink to 50 nm or less in devices found in integrated circuits. At the same time, the thermal de Broglie wavelength for electrons in Si at 300 K is some 5 nm. How might we expect quantum mechanics to arise in the transport through these small devices? Here, issues relevant for the quantum transport description of transport in ultra-small devices are discussed, such as the issue of quantum localization - just how small can the minimum area be in which a single electron can be localized. After discussing such a minimum size, the localization packet is associated with an `effective' potential in which sharp discontinuities are removed from the potential within the device. The replacement of sharp potentials by smoothed potentials removes much of the driving force for quantization within these device structures. It will be shown that the introduction of such an effective potential leads to an enhancement of the drain-induced barrier lowering in ultra-small devices, principally in the `on' state.

AB - Within the next decade or so, it is expected that gate lengths will shrink to 50 nm or less in devices found in integrated circuits. At the same time, the thermal de Broglie wavelength for electrons in Si at 300 K is some 5 nm. How might we expect quantum mechanics to arise in the transport through these small devices? Here, issues relevant for the quantum transport description of transport in ultra-small devices are discussed, such as the issue of quantum localization - just how small can the minimum area be in which a single electron can be localized. After discussing such a minimum size, the localization packet is associated with an `effective' potential in which sharp discontinuities are removed from the potential within the device. The replacement of sharp potentials by smoothed potentials removes much of the driving force for quantization within these device structures. It will be shown that the introduction of such an effective potential leads to an enhancement of the drain-induced barrier lowering in ultra-small devices, principally in the `on' state.

UR - http://www.scopus.com/inward/record.url?scp=0033749512&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033749512&partnerID=8YFLogxK

U2 - 10.1006/spmi.1999.0800

DO - 10.1006/spmi.1999.0800

M3 - Article

AN - SCOPUS:0033749512

VL - 27

SP - 61

EP - 66

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 2

ER -