Onset of deep UV surface stimulated emission from AlGaN multiple quantum wells

Xiaohang Li, Hongen Xie, Fernando Ponce, Jae Hyun Ryou, Theeradetch Detchprohm, Russell Dupuis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrated onset of deep UV surface stimulated emission at 260 nm from c-plane AlGaN heterostructures grown on a sapphire substrate by optical pumping.

Original languageEnglish (US)
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
StatePublished - Dec 16 2016
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other2016 Conference on Lasers and Electro-Optics, CLEO 2016
CountryUnited States
CitySan Jose
Period6/5/166/10/16

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Li, X., Xie, H., Ponce, F., Ryou, J. H., Detchprohm, T., & Dupuis, R. (2016). Onset of deep UV surface stimulated emission from AlGaN multiple quantum wells. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016 [7788056] Institute of Electrical and Electronics Engineers Inc..