Abstract

In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2011-2015
Number of pages5
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Solar cells
Carrier transport
Poisson equation
Doping (additives)
Crystalline materials
Defects
Kinetics

Keywords

  • cadmium compounds
  • copper
  • numerical simulation
  • photovoltaic cells
  • semiconductor device reliability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Guo, D., Akis, R., Brinkman, D., Sankin, I., Fang, T., Vasileska, D., & Ringhofer, C. (2014). One-dimensional reaction-diffusion simulation of Cu migration in polycrystalline CdTe solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2011-2015). [6925321] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925321

One-dimensional reaction-diffusion simulation of Cu migration in polycrystalline CdTe solar cells. / Guo, D.; Akis, R.; Brinkman, D.; Sankin, I.; Fang, T.; Vasileska, Dragica; Ringhofer, Christian.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2011-2015 6925321.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Guo, D, Akis, R, Brinkman, D, Sankin, I, Fang, T, Vasileska, D & Ringhofer, C 2014, One-dimensional reaction-diffusion simulation of Cu migration in polycrystalline CdTe solar cells. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925321, Institute of Electrical and Electronics Engineers Inc., pp. 2011-2015, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925321
Guo D, Akis R, Brinkman D, Sankin I, Fang T, Vasileska D et al. One-dimensional reaction-diffusion simulation of Cu migration in polycrystalline CdTe solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2011-2015. 6925321 https://doi.org/10.1109/PVSC.2014.6925321
Guo, D. ; Akis, R. ; Brinkman, D. ; Sankin, I. ; Fang, T. ; Vasileska, Dragica ; Ringhofer, Christian. / One-dimensional reaction-diffusion simulation of Cu migration in polycrystalline CdTe solar cells. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 2011-2015
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