One-dimensional model of the programming kinetics of conductive-bridge memory cells

John R. Jameson; Nad Gilbert; Foroozan Koushan; Juan Saenz; Janet Wang; Shane Hollmer; Michael N. Kozicki

doi:10.1063/1.3623485

One-dimensional model of the programming kinetics of conductive-bridge memory cells

John R. Jameson, Nad Gilbert, Foroozan Koushan, Juan Saenz, Janet Wang, Shane Hollmer, Michael N. Kozicki

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

A one-dimensional model of filament growth in conductive-bridge memory cells is presented, in which ions are thermally excited from the anode surface into the electrolyte, pulled by the electric field through a periodic series of wells and reduced at the cathode to form a metallic filament. The voltage, temperature, and thickness dependencies of the time required to program a cell are calculated, and material parameters for Ag/GeS ₂/W cells are obtained by comparison to experiment. The relation of the model to recent observations of quantized conductance is highlighted, as is the need for further study of the Ag/GeS ₂ interface.

Original language	English (US)
Article number	063506
Journal	Applied Physics Letters
Volume	99
Issue number	6
DOIs	https://doi.org/10.1063/1.3623485
State	Published - Aug 8 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3623485

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title = "One-dimensional model of the programming kinetics of conductive-bridge memory cells",

abstract = "A one-dimensional model of filament growth in conductive-bridge memory cells is presented, in which ions are thermally excited from the anode surface into the electrolyte, pulled by the electric field through a periodic series of wells and reduced at the cathode to form a metallic filament. The voltage, temperature, and thickness dependencies of the time required to program a cell are calculated, and material parameters for Ag/GeS 2/W cells are obtained by comparison to experiment. The relation of the model to recent observations of quantized conductance is highlighted, as is the need for further study of the Ag/GeS 2 interface.",

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T1 - One-dimensional model of the programming kinetics of conductive-bridge memory cells

AU - Jameson, John R.

AU - Gilbert, Nad

AU - Koushan, Foroozan

AU - Saenz, Juan

AU - Wang, Janet

AU - Hollmer, Shane

AU - Kozicki, Michael N.

PY - 2011/8/8

Y1 - 2011/8/8

N2 - A one-dimensional model of filament growth in conductive-bridge memory cells is presented, in which ions are thermally excited from the anode surface into the electrolyte, pulled by the electric field through a periodic series of wells and reduced at the cathode to form a metallic filament. The voltage, temperature, and thickness dependencies of the time required to program a cell are calculated, and material parameters for Ag/GeS 2/W cells are obtained by comparison to experiment. The relation of the model to recent observations of quantized conductance is highlighted, as is the need for further study of the Ag/GeS 2 interface.

AB - A one-dimensional model of filament growth in conductive-bridge memory cells is presented, in which ions are thermally excited from the anode surface into the electrolyte, pulled by the electric field through a periodic series of wells and reduced at the cathode to form a metallic filament. The voltage, temperature, and thickness dependencies of the time required to program a cell are calculated, and material parameters for Ag/GeS 2/W cells are obtained by comparison to experiment. The relation of the model to recent observations of quantized conductance is highlighted, as is the need for further study of the Ag/GeS 2 interface.

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ER -

One-dimensional model of the programming kinetics of conductive-bridge memory cells

Abstract

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