One-dimensional model of the programming kinetics of conductive-bridge memory cells

John R. Jameson, Nad Gilbert, Foroozan Koushan, Juan Saenz, Janet Wang, Shane Hollmer, Michael N. Kozicki

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Abstract

A one-dimensional model of filament growth in conductive-bridge memory cells is presented, in which ions are thermally excited from the anode surface into the electrolyte, pulled by the electric field through a periodic series of wells and reduced at the cathode to form a metallic filament. The voltage, temperature, and thickness dependencies of the time required to program a cell are calculated, and material parameters for Ag/GeS 2/W cells are obtained by comparison to experiment. The relation of the model to recent observations of quantized conductance is highlighted, as is the need for further study of the Ag/GeS 2 interface.

Original languageEnglish (US)
Article number063506
JournalApplied Physics Letters
Volume99
Issue number6
DOIs
StatePublished - Aug 8 2011
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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