One-dimensional conduction in the 2D electron gas of a GaAs-AlGaAs heterojunction

Trevor Thornton, M. Pepper, H. Ahmed, D. Andrews, G. J. Davies

Research output: Contribution to journalArticle

499 Citations (Scopus)

Abstract

We present results on the transport properties of the 2D electron gas in a narrow channel formed by the split gate of a GaAs-AlGaAs heterojunction field-effect transistor. There are both quantum-interference and interaction corrections to the conductivity. We find that the temperature dependence of the phase relaxation length is in agreement with a recent theory based on scattering by electromagnetic fluctuations. Beyond the regime of quantum interference the conductivity varies with temperature as T2.

Original languageEnglish (US)
Pages (from-to)1198-1201
Number of pages4
JournalPhysical Review Letters
Volume56
Issue number11
DOIs
StatePublished - 1986
Externally publishedYes

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aluminum gallium arsenides
electron gas
heterojunctions
interference
conduction
conductivity
field effect transistors
transport properties
electromagnetism
temperature dependence
scattering
interactions
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

One-dimensional conduction in the 2D electron gas of a GaAs-AlGaAs heterojunction. / Thornton, Trevor; Pepper, M.; Ahmed, H.; Andrews, D.; Davies, G. J.

In: Physical Review Letters, Vol. 56, No. 11, 1986, p. 1198-1201.

Research output: Contribution to journalArticle

Thornton, Trevor ; Pepper, M. ; Ahmed, H. ; Andrews, D. ; Davies, G. J. / One-dimensional conduction in the 2D electron gas of a GaAs-AlGaAs heterojunction. In: Physical Review Letters. 1986 ; Vol. 56, No. 11. pp. 1198-1201.
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