One-dimensional conduction in the 2D electron gas of a GaAs-AlGaAs heterojunction

T. J. Thornton; M. Pepper; H. Ahmed; D. Andrews; G. J. Davies

doi:10.1103/PhysRevLett.56.1198

One-dimensional conduction in the 2D electron gas of a GaAs-AlGaAs heterojunction

T. J. Thornton, M. Pepper, H. Ahmed, D. Andrews, G. J. Davies

Research output: Contribution to journal › Article › peer-review

535 Scopus citations

Abstract

We present results on the transport properties of the 2D electron gas in a narrow channel formed by the split gate of a GaAs-AlGaAs heterojunction field-effect transistor. There are both quantum-interference and interaction corrections to the conductivity. We find that the temperature dependence of the phase relaxation length is in agreement with a recent theory based on scattering by electromagnetic fluctuations. Beyond the regime of quantum interference the conductivity varies with temperature as T2.

Original language	English (US)
Pages (from-to)	1198-1201
Number of pages	4
Journal	Physical Review Letters
Volume	56
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevLett.56.1198
State	Published - 1986
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.56.1198

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title = "One-dimensional conduction in the 2D electron gas of a GaAs-AlGaAs heterojunction",

abstract = "We present results on the transport properties of the 2D electron gas in a narrow channel formed by the split gate of a GaAs-AlGaAs heterojunction field-effect transistor. There are both quantum-interference and interaction corrections to the conductivity. We find that the temperature dependence of the phase relaxation length is in agreement with a recent theory based on scattering by electromagnetic fluctuations. Beyond the regime of quantum interference the conductivity varies with temperature as T2.",

author = "Thornton, {T. J.} and M. Pepper and H. Ahmed and D. Andrews and Davies, {G. J.}",

year = "1986",

doi = "10.1103/PhysRevLett.56.1198",

language = "English (US)",

volume = "56",

pages = "1198--1201",

journal = "Physical Review Letters",

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T1 - One-dimensional conduction in the 2D electron gas of a GaAs-AlGaAs heterojunction

AU - Thornton, T. J.

AU - Pepper, M.

AU - Ahmed, H.

AU - Andrews, D.

AU - Davies, G. J.

PY - 1986

Y1 - 1986

N2 - We present results on the transport properties of the 2D electron gas in a narrow channel formed by the split gate of a GaAs-AlGaAs heterojunction field-effect transistor. There are both quantum-interference and interaction corrections to the conductivity. We find that the temperature dependence of the phase relaxation length is in agreement with a recent theory based on scattering by electromagnetic fluctuations. Beyond the regime of quantum interference the conductivity varies with temperature as T2.

AB - We present results on the transport properties of the 2D electron gas in a narrow channel formed by the split gate of a GaAs-AlGaAs heterojunction field-effect transistor. There are both quantum-interference and interaction corrections to the conductivity. We find that the temperature dependence of the phase relaxation length is in agreement with a recent theory based on scattering by electromagnetic fluctuations. Beyond the regime of quantum interference the conductivity varies with temperature as T2.

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DO - 10.1103/PhysRevLett.56.1198

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JF - Physical Review Letters

IS - 11

ER -

One-dimensional conduction in the 2D electron gas of a GaAs-AlGaAs heterojunction

Abstract

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