One-dimensional conduction in the 2D electron gas of a GaAs-AlGaAs heterojunction

T. J. Thornton, M. Pepper, H. Ahmed, D. Andrews, G. J. Davies

Research output: Contribution to journalArticle

500 Scopus citations

Abstract

We present results on the transport properties of the 2D electron gas in a narrow channel formed by the split gate of a GaAs-AlGaAs heterojunction field-effect transistor. There are both quantum-interference and interaction corrections to the conductivity. We find that the temperature dependence of the phase relaxation length is in agreement with a recent theory based on scattering by electromagnetic fluctuations. Beyond the regime of quantum interference the conductivity varies with temperature as T2.

Original languageEnglish (US)
Pages (from-to)1198-1201
Number of pages4
JournalPhysical Review Letters
Volume56
Issue number11
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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