TY - GEN
T1 - On-Wafer Graphene Devices for THz Applications Using a High-Yield Fabrication Process
AU - Theofanopoulos, Panagiotis C.
AU - Trichopoulos, Georgios C.
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - We characterize a novel fabrication procedure for the implementation of large arrays of subwavelength graphene devices. With the proposed process, we can now integrate graphene layers on large substrate areas (> 4 cm) and implement thousands of devices with high-yield (> 90 %). Examples of such systems include broadband THz phased arrays and metasurfaces that can be used in THz imaging and sensing. Current nano-fabrication processes hinder the proliferation of large arrays due to the fragile nature of graphene. Conversely, we use titanium sacrificial layers to protect the delicate graphene throughout the fabrication process. Thus, we minimize graphene delamination and enable multiple devices on large-area substrates with high-yield. In addition, we present a series of on-wafer measurement results in the 220-330 GHz band, verifying the robustness of our fabrication process.
AB - We characterize a novel fabrication procedure for the implementation of large arrays of subwavelength graphene devices. With the proposed process, we can now integrate graphene layers on large substrate areas (> 4 cm) and implement thousands of devices with high-yield (> 90 %). Examples of such systems include broadband THz phased arrays and metasurfaces that can be used in THz imaging and sensing. Current nano-fabrication processes hinder the proliferation of large arrays due to the fragile nature of graphene. Conversely, we use titanium sacrificial layers to protect the delicate graphene throughout the fabrication process. Thus, we minimize graphene delamination and enable multiple devices on large-area substrates with high-yield. In addition, we present a series of on-wafer measurement results in the 220-330 GHz band, verifying the robustness of our fabrication process.
KW - Graphene
KW - characterization
KW - fabrication
KW - on-wafer
KW - terahertz
UR - http://www.scopus.com/inward/record.url?scp=85069976206&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85069976206&partnerID=8YFLogxK
U2 - 10.1109/mwsym.2019.8701093
DO - 10.1109/mwsym.2019.8701093
M3 - Conference contribution
AN - SCOPUS:85069976206
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 1107
EP - 1110
BT - 2019 IEEE MTT-S International Microwave Symposium, IMS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE MTT-S International Microwave Symposium, IMS 2019
Y2 - 2 June 2019 through 7 June 2019
ER -