On-wafer device characterization with non-contact probes in the THz band

Cosan Caglayan, Georgios Trichopoulos, Kubilay Sertel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We present a novel approach for on-wafer device characterization in the THz band. A non-contact method eliminating the need for physical contact with test wafer is proposed. Non-contact method is based on radiative coupling of Network Analyzer's test ports into coplanar environment of monolithic device (DUT) through integrated planar THz antennas. Broadband butterfly-shaped antennas are used to ensure that the characterization setup is not limited by the bandwidth of the non-contact probes. Calibration is carried out using open and short terminations with different lengths. Initial results based on the full wave simulations demonstrate the broadband and efficient coupling capability of non-contact THz probes as well as the functionality of different terminations for calibration purposes.

Original languageEnglish (US)
Title of host publicationIEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
Pages1134-1135
Number of pages2
DOIs
StatePublished - 2013
Externally publishedYes
Event2013 IEEE Antennas and Propagation Society International Symposium, APSURSI 2013 - Orlando, FL, United States
Duration: Jul 7 2013Jul 13 2013

Other

Other2013 IEEE Antennas and Propagation Society International Symposium, APSURSI 2013
CountryUnited States
CityOrlando, FL
Period7/7/137/13/13

Fingerprint

Calibration
Antennas
Electric network analyzers
Bandwidth

Keywords

  • sub-mmW
  • THz antennas
  • THz device characterization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Caglayan, C., Trichopoulos, G., & Sertel, K. (2013). On-wafer device characterization with non-contact probes in the THz band. In IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) (pp. 1134-1135). [6711227] https://doi.org/10.1109/APS.2013.6711227

On-wafer device characterization with non-contact probes in the THz band. / Caglayan, Cosan; Trichopoulos, Georgios; Sertel, Kubilay.

IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). 2013. p. 1134-1135 6711227.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Caglayan, C, Trichopoulos, G & Sertel, K 2013, On-wafer device characterization with non-contact probes in the THz band. in IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)., 6711227, pp. 1134-1135, 2013 IEEE Antennas and Propagation Society International Symposium, APSURSI 2013, Orlando, FL, United States, 7/7/13. https://doi.org/10.1109/APS.2013.6711227
Caglayan C, Trichopoulos G, Sertel K. On-wafer device characterization with non-contact probes in the THz band. In IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). 2013. p. 1134-1135. 6711227 https://doi.org/10.1109/APS.2013.6711227
Caglayan, Cosan ; Trichopoulos, Georgios ; Sertel, Kubilay. / On-wafer device characterization with non-contact probes in the THz band. IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). 2013. pp. 1134-1135
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