On the variability of HfOx RRAM: From numerical simulation to compact modeling

Ximeng Guan, Shimeng Yu, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The trap-assisted conduction and filamentary switching mechanisms of the HfOx-based resistive memory are studied. To reproduce the experimental I-V curves, a numerical simulator is developed. Comparison with experiments shows mat the cycle-to-cycle variation in the RRAM is mainly due to the variation in me gap distance between the filament tips and the electrode. A set of analytical equations suitable for compact modeling is then derived to capture the switching behavior of metal oxide-based RRAM (OxRRAM). By introducing the random perturbations of the gap size, the model successfully reproduces the measured resistance variation of the multi-level RRAM cell.

Original languageEnglish (US)
Title of host publicationNanotechnology 2012
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages815-820
Number of pages6
StatePublished - Aug 17 2012
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: Jun 18 2012Jun 21 2012

Publication series

NameTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period6/18/126/21/12

Keywords

  • Compact model
  • RRAM
  • Resistive switching
  • Variation

ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

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  • Cite this

    Guan, X., Yu, S., & Wong, H. S. P. (2012). On the variability of HfOx RRAM: From numerical simulation to compact modeling. In Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 (pp. 815-820). (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).