This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between IG gate current during irradiation and different behaviors observed during the post-irradiation test. This work addresses the relevance of the post-gate stress test used in space qualification of power MOSFETs.
- Heavy ion
- latent Defect
- power MOSFET
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering