On the use of post-irradiation-gate-stress results to refine sensitive operating area determination

A. Privat, A. D. Touboul, A. Michez, S. Bourdarie, J. R. Vaille, F. Wrobel, N. Chatry, G. Chaumont, E. Lorfevre, F. Bezerra, F. Saigne

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between IG gate current during irradiation and different behaviors observed during the post-irradiation test. This work addresses the relevance of the post-gate stress test used in space qualification of power MOSFETs.

Original languageEnglish (US)
Article number6954565
Pages (from-to)2930-2935
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number6
DOIs
StatePublished - Dec 1 2014
Externally publishedYes

Keywords

  • Heavy ion
  • latent Defect
  • post-irradiation-gate-stress
  • power MOSFET
  • reliability
  • SEGR

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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