On the Use of Monte Carlo Techniques for the Calculation of Transient Dynamic Response in Semiconductors

D. K. Ferry, J. R. Barker

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7 Scopus citations

Abstract

The transient dynamic response in InAs and GaAs is calculated by both, a drifted Maxwellian approach and a Monte Carlo approach. While previous calculations by the latter method yield results that differ from those obtained using the Maxwellian approach, using an ensemble Monte Carlo technique, which is free from errors introduced by velocity estimators, it is found that the results are extremely sensitive to the value of Γ, the self‐scattering parameter. However, when Γ is selected so that <Δt> = 1/Γ « >τ>, comparable results are obtained for the two techniques.

Original languageEnglish (US)
Pages (from-to)683-689
Number of pages7
Journalphysica status solidi (b)
Volume100
Issue number2
DOIs
StatePublished - Aug 1 1980

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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