On the thermal stability of 1.3μm GaAsSb/GaAs-based lasers

K. Hild; S. J. Sweeney; D. A. Lock; S. Wright; J. B. Wang; Shane Johnson; Yong-Hang Zhang

doi:10.1109/LEOS.2005.1548013

On the thermal stability of 1.3μm GaAsSb/GaAs-based lasers

K. Hild, S. J. Sweeney, D. A. Lock, S. Wright, J. B. Wang, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

In spite of the almost ideal variation of the radiative current of 1.3 μm GaAsSb/GaAs-based lasers, the threshold current, J_th, is high due to non-radiative recombination accounting for 90% J_th near room temperature. This also gives rise to low T_o values ∼60K close to room temperature, similar to that for InGaAsP/InP.

Original language	English (US)
Title of host publication	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Pages	331-332
Number of pages	2
DOIs	https://doi.org/10.1109/LEOS.2005.1548013
State	Published - 2005
Event	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia Duration: Oct 22 2005 → Oct 28 2005

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2005
ISSN (Print)	1092-8081

Other

Other	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Country/Territory	Australia
City	Sydney
Period	10/22/05 → 10/28/05

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LEOS.2005.1548013

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Hild, K., Sweeney, S. J., Lock, D. A., Wright, S., Wang, J. B., Johnson, S., & Zhang, Y.-H. (2005). On the thermal stability of 1.3μm GaAsSb/GaAs-based lasers. In 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 (pp. 331-332). Article 1548013 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2005). https://doi.org/10.1109/LEOS.2005.1548013

On the thermal stability of 1.3μm GaAsSb/GaAs-based lasers. / Hild, K.; Sweeney, S. J.; Lock, D. A. et al.
18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. 2005. p. 331-332 1548013 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hild, K, Sweeney, SJ, Lock, DA, Wright, S, Wang, JB, Johnson, S & Zhang, Y-H 2005, On the thermal stability of 1.3μm GaAsSb/GaAs-based lasers. in 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005., 1548013, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2005, pp. 331-332, 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005, Sydney, Australia, 10/22/05. https://doi.org/10.1109/LEOS.2005.1548013

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abstract = "In spite of the almost ideal variation of the radiative current of 1.3 μm GaAsSb/GaAs-based lasers, the threshold current, Jth, is high due to non-radiative recombination accounting for 90% Jth near room temperature. This also gives rise to low To values ∼60K close to room temperature, similar to that for InGaAsP/InP.",

author = "K. Hild and Sweeney, {S. J.} and Lock, {D. A.} and S. Wright and Wang, {J. B.} and Shane Johnson and Yong-Hang Zhang",

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AU - Wang, J. B.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

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AB - In spite of the almost ideal variation of the radiative current of 1.3 μm GaAsSb/GaAs-based lasers, the threshold current, Jth, is high due to non-radiative recombination accounting for 90% Jth near room temperature. This also gives rise to low To values ∼60K close to room temperature, similar to that for InGaAsP/InP.

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BT - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

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Y2 - 22 October 2005 through 28 October 2005

ER -

On the thermal stability of 1.3μm GaAsSb/GaAs-based lasers

Abstract

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