On the thermal stability of 1.3μm GaAsSb/GaAs-based lasers

K. Hild, S. J. Sweeney, D. A. Lock, S. Wright, J. B. Wang, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In spite of the almost ideal variation of the radiative current of 1.3 μm GaAsSb/GaAs-based lasers, the threshold current, Jth, is high due to non-radiative recombination accounting for 90% Jth near room temperature. This also gives rise to low To values ∼60K close to room temperature, similar to that for InGaAsP/InP.

Original languageEnglish (US)
Title of host publication18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Pages331-332
Number of pages2
DOIs
StatePublished - Dec 1 2005
Event18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia
Duration: Oct 22 2005Oct 28 2005

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2005
ISSN (Print)1092-8081

Other

Other18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
CountryAustralia
CitySydney
Period10/22/0510/28/05

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Hild, K., Sweeney, S. J., Lock, D. A., Wright, S., Wang, J. B., Johnson, S., & Zhang, Y-H. (2005). On the thermal stability of 1.3μm GaAsSb/GaAs-based lasers. In 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 (pp. 331-332). [1548013] (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2005). https://doi.org/10.1109/LEOS.2005.1548013