On the switching parameter variation of metal oxide RRAM - Part II: Model corroboration and device design strategy

Shimeng Yu, Ximeng Guan, H. S.Philip Wong

Research output: Contribution to journalArticlepeer-review

147 Scopus citations

Abstract

Using the model developed in Part I of this two-part paper, the simulated dc sweep and pulse transient characteristics of a metal oxide resistive random access memory cell are corroborated with the experimental data of HfO x memory. Key switching features such as the abrupt SET process, gradual RESET process, current fluctuation in the RESET process, and multilevel resistance state distributions are captured by the simulation. The current fluctuation in the RESET process is caused by the competition between the simultaneous oxygen vacancy recombination and generation processes. The origin of the high-resistance state variation and the tail bit problem are attributed to the variation of the tunneling gap distances and the stochastic nature of new Vo generation in the tunneling gap region, respectively. The use of the write-verify technique and a bilayer oxide structure are proposed to achieve a tighter resistance distribution.

Original languageEnglish (US)
Article number6155085
Pages (from-to)1183-1188
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume59
Issue number4
DOIs
StatePublished - Apr 1 2012

Keywords

  • Parameter fluctuation
  • resistive random access memory (RRAM)
  • resistive switching
  • switching uniformity
  • tail bit
  • variability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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