TY - GEN
T1 - On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials
AU - Ding, Laura
AU - Zhang, Chaomin
AU - Narland, Tine Uberg
AU - Faleev, Nikolai
AU - Honsberg, Christiana
AU - Bertoni, Mariana
N1 - Funding Information:
The authors acknowledge funding from the U.S. Department of Energy under contract DE-EE0006335 and the Engineering
Funding Information:
Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EECϋ1041895. We thank Dr. Mathieu Boccard from the Holman Research Group at Arizona State University for his help with the PECVD processes.
Funding Information:
The authors acknowledge funding from the U.S. Department of Energy under contract DE-EE0006335 and the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. We thank Dr. Mathieu Boccard from the Holman Research Group at Arizona State University for his help with the PECVD processes.
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.
AB - A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.
KW - Gettering
KW - Minority-carrier lifetime
KW - Silicon. III-V growth
KW - Tandem cells
UR - http://www.scopus.com/inward/record.url?scp=85048461489&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048461489&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2017.8366462
DO - 10.1109/PVSC.2017.8366462
M3 - Conference contribution
AN - SCOPUS:85048461489
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 1679
EP - 1681
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -
