On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials

Laura Ding, Chaomin Zhang, Tine Uberg Narland, Nikolai Faleev, Christiana Honsberg, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Fingerprint

Molecular beams
Carrier lifetime
Silicon
Epitaxial growth
Degradation
Impurities
Molecular beam epitaxy
Gallium phosphide
Etching
Annealing
Defects

Keywords

  • Gettering
  • Minority-carrier lifetime
  • Silicon. III-V growth
  • Tandem cells

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ding, L., Zhang, C., Narland, T. U., Faleev, N., Honsberg, C., & Bertoni, M. (2018). On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366462

On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. / Ding, Laura; Zhang, Chaomin; Narland, Tine Uberg; Faleev, Nikolai; Honsberg, Christiana; Bertoni, Mariana.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ding, L, Zhang, C, Narland, TU, Faleev, N, Honsberg, C & Bertoni, M 2018, On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366462
Ding L, Zhang C, Narland TU, Faleev N, Honsberg C, Bertoni M. On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4 https://doi.org/10.1109/PVSC.2017.8366462
Ding, Laura ; Zhang, Chaomin ; Narland, Tine Uberg ; Faleev, Nikolai ; Honsberg, Christiana ; Bertoni, Mariana. / On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4
@inproceedings{b2ba84789d5544ce87209b24fbf0fb7e,
title = "On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials",
abstract = "A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.",
keywords = "Gettering, Minority-carrier lifetime, Silicon. III-V growth, Tandem cells",
author = "Laura Ding and Chaomin Zhang and Narland, {Tine Uberg} and Nikolai Faleev and Christiana Honsberg and Mariana Bertoni",
year = "2018",
month = "5",
day = "25",
doi = "10.1109/PVSC.2017.8366462",
language = "English (US)",
pages = "1--4",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials

AU - Ding, Laura

AU - Zhang, Chaomin

AU - Narland, Tine Uberg

AU - Faleev, Nikolai

AU - Honsberg, Christiana

AU - Bertoni, Mariana

PY - 2018/5/25

Y1 - 2018/5/25

N2 - A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.

AB - A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.

KW - Gettering

KW - Minority-carrier lifetime

KW - Silicon. III-V growth

KW - Tandem cells

UR - http://www.scopus.com/inward/record.url?scp=85048461489&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048461489&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2017.8366462

DO - 10.1109/PVSC.2017.8366462

M3 - Conference contribution

AN - SCOPUS:85048461489

SP - 1

EP - 4

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -