Abstract
A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.
| Original language | English (US) |
|---|---|
| Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1-4 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781509056057 |
| DOIs | |
| State | Published - May 25 2018 |
| Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017 |
Other
| Other | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 |
|---|---|
| Country | United States |
| City | Washington |
| Period | 6/25/17 → 6/30/17 |
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Keywords
- Gettering
- Minority-carrier lifetime
- Silicon. III-V growth
- Tandem cells
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. / Ding, Laura; Zhang, Chaomin; Narland, Tine Uberg; Faleev, Nikolai; Honsberg, Christiana; Bertoni, Mariana.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials
AU - Ding, Laura
AU - Zhang, Chaomin
AU - Narland, Tine Uberg
AU - Faleev, Nikolai
AU - Honsberg, Christiana
AU - Bertoni, Mariana
PY - 2018/5/25
Y1 - 2018/5/25
N2 - A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.
AB - A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.
KW - Gettering
KW - Minority-carrier lifetime
KW - Silicon. III-V growth
KW - Tandem cells
UR - http://www.scopus.com/inward/record.url?scp=85048461489&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048461489&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2017.8366462
DO - 10.1109/PVSC.2017.8366462
M3 - Conference contribution
SP - 1
EP - 4
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -