On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials

Laura Ding; Chaomin Zhang; Tine Uberg Narland; Nikolai Faleev; Christiana Honsberg; Mariana Bertoni

doi:10.1109/PVSC.2017.8366462

On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials

Laura Ding, Chaomin Zhang, Tine Uberg Narland, Nikolai Faleev, Christiana Honsberg, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.

Original language	English (US)
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366462
State	Published - May 25 2018
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country	United States
City	Washington
Period	6/25/17 → 6/30/17

Keywords

Gettering
Minority-carrier lifetime
Silicon. III-V growth
Tandem cells

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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Cite this

Ding, L., Zhang, C., Narland, T. U., Faleev, N., Honsberg, C., & Bertoni, M. (2018). On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366462

On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. / Ding, Laura; Zhang, Chaomin; Narland, Tine Uberg; Faleev, Nikolai; Honsberg, Christiana ; Bertoni, Mariana.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ding, L, Zhang, C, Narland, TU, Faleev, N, Honsberg, C & Bertoni, M 2018, On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366462

Ding, Laura ; Zhang, Chaomin ; Narland, Tine Uberg ; Faleev, Nikolai ; Honsberg, Christiana ; Bertoni, Mariana. / On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4

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