On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials

Laura Ding, Chaomin Zhang, Tine Uberg Narland, Nikolai Faleev, Christiana Honsberg, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Keywords

  • Gettering
  • Minority-carrier lifetime
  • Silicon. III-V growth
  • Tandem cells

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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