TY - GEN
T1 - On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials
AU - Ding, Laura
AU - Zhang, Chaomin
AU - Norland, Tine Uberg
AU - Faleev, Nikolai
AU - Honsberg, Christiana
AU - Bertoni, Mariana
N1 - Funding Information:
The authors acknowledge funding from the U.S. Department of Energy under contract DE-EE0006335 and the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. We thank Dr. Mathieu Boccard from the Holman Research Group at Arizona State University for his help with the PECVD processes
Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/18
Y1 - 2016/11/18
N2 - A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.
AB - A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.
KW - gettering
KW - minority-carrier lifetime
KW - silicon. III-V growth
KW - tandem cells
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U2 - 10.1109/PVSC.2016.7749989
DO - 10.1109/PVSC.2016.7749989
M3 - Conference contribution
AN - SCOPUS:85003550164
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2048
EP - 2051
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Y2 - 5 June 2016 through 10 June 2016
ER -