On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials

Laura Ding, Chaomin Zhang, Tine Uberg Norland, Nikolai Faleev, Christiana Honsberg, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

A major hindrance to the development of devices integrating III-V materials on silicon is the preservation of its electronic quality. In this contribution, we report on the severe decrease in silicon bulk minority-carrier lifetime after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. The drop in lifetime occurs after annealing silicon above 500°C; we assign the increased recombination rate to extrinsic defect originating from highly mobile impurities diffusing from the MBE chamber. We show that the contaminant can be gettered by phosphorous diffusion. We investigate two approaches to protect the Si bulk lifetime by containing the contaminant to a part of the silicon that can be removed by etching. This provides a path to successful III-V growth on silicon.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2048-2051
Number of pages4
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Fingerprint

Molecular beams
Carrier lifetime
Epitaxial growth
Degradation
Silicon
Impurities
Molecular beam epitaxy
Gallium phosphide
Etching
Annealing
Defects

Keywords

  • gettering
  • minority-carrier lifetime
  • silicon. III-V growth
  • tandem cells

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Ding, L., Zhang, C., Norland, T. U., Faleev, N., Honsberg, C., & Bertoni, M. (2016). On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 2048-2051). [7749989] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749989

On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. / Ding, Laura; Zhang, Chaomin; Norland, Tine Uberg; Faleev, Nikolai; Honsberg, Christiana; Bertoni, Mariana.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 2048-2051 7749989.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ding, L, Zhang, C, Norland, TU, Faleev, N, Honsberg, C & Bertoni, M 2016, On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749989, Institute of Electrical and Electronics Engineers Inc., pp. 2048-2051, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749989
Ding L, Zhang C, Norland TU, Faleev N, Honsberg C, Bertoni M. On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 2048-2051. 7749989 https://doi.org/10.1109/PVSC.2016.7749989
Ding, Laura ; Zhang, Chaomin ; Norland, Tine Uberg ; Faleev, Nikolai ; Honsberg, Christiana ; Bertoni, Mariana. / On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. pp. 2048-2051
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