On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem

Clemens Heitzinger, Siegfried Selberherr

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The formation and dissolution of silicon self-interstitial clusters is linked to the phenomenon of transient-enhanced diffusion (TED) which in turn has gained importance in the manufacturing of semiconductor devices. Based on theoretical considerations and measurements of the number of self-interstitial clusters during a thermal step, a model for the formation and dissolution of self-interstitial clusters is presented including the adjusted model parameters for two different technologies (i.e. material parameter sets). In order to automate the inverse modeling part, a general optimization framework was used. In addition to solving this problem, the same setup can solve a wide range of inverse modeling problems occurring in the domain of process simulation. Finally, the results are discussed and compared with a previous model.

Original languageEnglish (US)
Pages (from-to)167-171
Number of pages5
JournalMicroelectronics Journal
Volume35
Issue number2
DOIs
StatePublished - Feb 1 2004

Keywords

  • Diffusion processes
  • Inverse problems
  • Silicon self-interstitial clusters

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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